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參數(shù)資料
| 型號： | IRFD9014PBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | MOSFETs |
| 英文描述： | MOSFET P-CH 60V 1.1A 4-DIP |
| 中文描述： | MOSFET Small Signal P-Chan 60V 1.1 Amp |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 1750K |
| 代理商： | IRFD9014PBF |
Document Number: 91136
S10-2463-Rev. C, 08-Nov-10
www.vishay.com
1
Power MOSFET
IRFD9014, SiHFD9014
Vishay Siliconix
FEATURES
Dynamic dV/dt Rating
Repetitive Avalanche Rated
For Automatic Insertion
End Stackable
P-Channel
175 °C Operating Temperature
Fast Switching
Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
device
design,
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain servers as a
thermal link to the mounting surface for power dissipation
levels up to 1 W.
low
on-resistance
and
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= - 25 V, starting T
J
= 25 °C, L = 33 mH, R
g
= 25
, I
AS
= - 2.2 A (see fig. 12).
c. I
SD
- 6.7 A, dI/dt
90 A/μs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(
)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
- 60
V
GS
= - 10 V
0.50
12
3.8
5.1
Single
S
G
D
P-Channel MOSFET
HVMDIP
D
S
G
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
HVMDIP
IRFD9014PbF
SiHFD9014-E3
IRFD9014
SiHFD9014
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
- 60
± 20
- 1.1
- 0.80
- 8.8
0.0083
140
- 1.1
0.13
1.3
- 4.5
- 55 to + 175
300
d
V
Continuous Drain Current
V
GS
at - 10 V
T
A
= 25 °C
T
A
= 100 °C
I
D
A
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
I
DM
W/°C
mJ
A
mJ
W
V/ns
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
T
A
= 25 °C
°C
for 10 s
* Pb containing terminations are not RoHS compliant, exemptions may apply
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| IRFD9020 | 功能描述:MOSFET P-Chan 60V 1.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFD9020PBF | 功能描述:MOSFET P-Chan 60V 1.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFD9022 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET TRANSISTORS P CHANNEL HEXDIP |
| IRFD9024 | 功能描述:MOSFET P-Chan 60V 1.6 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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