參數(shù)資料
型號: IRFD310
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=0.35A)
中文描述: 功率MOSFET(減振鋼板基本\u003d為400V,的Rds(on)\u003d 3.6ohm,身份證\u003d 0.35A)
文件頁數(shù): 1/6頁
文件大?。?/td> 50K
代理商: IRFD310
4-293
File Number
2324.4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
IRFD310
0.4A, 400V 3.600 Ohm, N-Channel
Power MOSFET
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17444.
Features
0.4A, 400V
r
DS(ON)
= 3.600
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
HEXDIP
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFD310
HEXDIP
IRFD310
NOTE: When ordering, use the entire part number.
G
D
S
SOURCE
GATE
DRAIN
Data Sheet
July 1999
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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