參數(shù)資料
型號: IRFB52N15
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 150伏時,RDS(on)的最大值\u003d 0.032ohm,身份證\u003d 50A條)
文件頁數(shù): 6/11頁
文件大?。?/td> 134K
代理商: IRFB52N15
IRFB/IRFS/IRFSL52N15D
6
www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
D D
DRIVER
A
15V
20V
25
50
75
100
125
150
175
0
180
360
540
720
900
Starting Tj, Junction Temperature
( C)
E
A
ID
15A
26A
36A
TOP
BOTTOM
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFB52N15D 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=150V, Rds(on)max=0.032ohm, Id=50A)
IRFB52N15DPBF 功能描述:MOSFET MOSFT 150V 60A 32mOhm 60nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFB5615PBF 功能描述:MOSFET Audio MOSFT 150V 34A 41mOhm 26nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFB5615PBF 制造商:International Rectifier 功能描述:MOSFET CLASS D 150V TO220AB
IRFB5615PBF 制造商:International Rectifier 功能描述:N CH MOSFET 150V 35A TO-220AB