參數(shù)資料
型號(hào)： IRF9540N
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
中文描述： 功率MOSFET（減振鋼板基本\u003d- 100V的，的Rds（on）\u003d 0.117ohm，身份證\u003d- 23A條）
文件頁(yè)數(shù)： 4/7頁(yè)
文件大?。?/td> 59K
代理商： IRF9540N
4-18
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
μ
s pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
I
D
,
100
100
1
10
1
0.1
10
μ
s
100
μ
s
1ms
10ms
100ms
DC
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
BY r
DS(ON)
AREA IS LIMITED
OPERATION IN THIS
500
200
I
D
,
0
-10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-20
-30
-40
-20
-40
-60
-80
-100
-50
V
GS
= -16V
0
V
GS
= -14V
V
GS
= -7V
V
GS
= -6V
V
GS
= -8V
V
GS
= -12V
V
GS
= -10V
V
GS
= -9V
V
GS
= -4V
V
GS
= -5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
,
0
-2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-4
-6
-8
-10
-20
-30
-40
-50
-10
V
GS
= -16V
V
GS
= -14V
0
V
GS
= -12V
V
GS
= -7V
V
GS
= -6V
V
GS
= -8V
V
GS
= -10V
V
GS
= -9V
V
GS
= -5V
V
GS
= -4V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
-4
-6
-8
-10
-2
-0.1
-1
-10
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
-100
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= 125
o
C
-12
-14
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
r
D
,
0.26
0.22
0.18
0.14
0.10
0
-20
-40
-60
-80
-100
V
GS
= -20V
V
GS
= -10V
R
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
2.0
1.5
1.0
0.5
0.2
N
V
GS
= -10V, I
D
= 10A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
O
IRF9540, RF1S9540SM
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