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參數(shù)資料
| 型號： | IRF9230 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 6.5 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 22K |
| 代理商： | IRF9230 |
IRF9230
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/96
Parameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
–200
–0.2
0.80
0.92
–4
–2
2
–25
–250
–100
100
700
200
40
8
31
7.0
17
50
100
100
80
0.8
5.0
–6.5
–28
–6.0
400
4
Negligible
5.0
13
1.67
0.12
30
V
GS
= 0
Reference to 25°C
I
D
= –1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
≥
–15V
V
GS
= 0
I
D
= –1mA
I
D
= –4A
I
D
= –6.5A
I
D
= –250mA
I
DS
= –4A
V
DS
= 0.8BV
DSS
T
J
= 125°C
V
GS
= –20V
V
GS
= 20V
V
GS
= 0
V
DS
= –25V
f = 1MHz
V
GS
= –10V
I
D
= –6.5A
V
DS
= 0.5BV
DSS
V
DD
= –100V
I
D
= –6.5A
R
G
= 7.5
I
S
= –6.5A
V
GS
= 0
I
F
= –6.5A
d
i
/ d
t
≤
–100A/
μ
s
T
J
= 25°C
T
J
= 25°C
V
DD
≤
–50V
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
1
Gate Threshold Voltage
Forward Transconductance
1
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
2
Diode Forward Voltage
1
Reverse Recovery Time
1
Reverse Recovery Charge
Forward Turn–On Time
PACKAGE CHARACTERISTICS
V
V/°C
V
S (
é
)
μ
A
nA
pF
nC
ns
A
V
ns
μ
C
nH
°C/W
BV
DSS
BV
DSS
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
R
θ
JC
R
θ
CS
R
θ
JA
Notes
1) Pulse Test: Pulse Width
≤
300ms,
δ ≤
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Internal Drain Inductance
(measured from 6mm down drain lead to centre of die)
Internal Source Inductance
(from 6mm down source lead to source bond pad)
THERMAL CHARACTERISTICS
Thermal Resistance Junction – Case
Thermal Resistance Case – Sink
Thermal Resistance Junction – Ambient
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