參數(shù)資料
型號: IRF8910
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁數(shù): 3/10頁
文件大?。?/td> 274K
代理商: IRF8910
www.irf.com
3
Fig 4.
Normalized On-Resistance
vs. Temperature
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
ID
VGS
10V
8.0V
5.5V
4.5V
3.5V
3.0V
2.8V
2.5V
TOP
BOTTOM
60μs PULSE WIDTH
Tj = 25°C
2.5V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
ID
2.5V
60μs PULSE WIDTH
Tj = 150°C
VGS
10V
8.0V
5.5V
4.5V
3.5V
3.0V
2.8V
2.5V
TOP
BOTTOM
1
2
3
4
5
6
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
ID
(
)
TJ = 25°C
TJ = 150°C
VDS = 10V
60μs PULSE WIDTH
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (°C)
0.5
1.0
1.5
RD
ID = 10A
VGS = 10V
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