參數(shù)資料
型號： IRF7509TR
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=+-30V)
中文描述： 功率MOSFET（減振鋼板基本\u003d - 30V的）
文件頁數(shù)： 2/8頁
文件大?。?/td> 217K
代理商： IRF7509TR
IRF7509
2
www.irf.com
Parameter
Min. Typ. Max. Units
30
—
P-Ch -30
—
N-Ch
—
0.059
P-Ch
— -0.039 —
—
0.09 0.110
—
0.14 0.175
—
0.17 0.20
—
0.30 0.40
N-Ch 1.0
—
P-Ch -1.0
—
N-Ch 1.9
—
P-Ch 0.92
—
N-Ch
—
—
P-Ch
—
—
N-Ch
—
—
P-Ch
—
—
N-P
––
—
N-Ch
––
7.8
P-Ch
—
7.5
N-Ch
––
1.2
P-Ch
—
1.3
N-Ch
––
2.5
P-Ch
—
2.5
N-Ch
—
4.7
P-Ch
—
9.7
N-Ch
—
10
P-Ch
—
12
N-Ch
—
12
P-Ch
—
19
N-Ch
—
5.3
P-Ch
—
9.3
N-Ch
—
210
P-Ch
—
180
N-Ch
—
80
P-Ch
—
87
N-Ch
—
32
P-Ch
—
42
Conditions
N-Ch
—
—
—
V
GS
= 0V, I
D
= 250μA
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= 1mA
Reference to 25°C, I
D
= -1mA
V
GS
= 10V, I
D
= 1.7A
V
GS
= 4.5V, I
D
= 0.85A
V
GS
= -10V, I
D
=-1.2A
V
GS
= -4.5V, I
D
=-0.6A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= V
, I
D
= -250μA
V
DS
= 10V, I
D
= 0.85A
V
DS
= -10V, I
D
= -0.6A
V
DS
= 24 V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V
V
DS
= 24 V, V
GS
= 0V, T
J
= 125°C
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
V
GS
= ± 20V
—
—
—
—
1.0
-1.0
25
-25
±100
12
11
1.8
1.9
3.8
3.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
I
GSS
Q
g
Gate-to-Source Forward Leakage
pF
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 21 )
N-Channel I
SD
≤
1.7A, di/dt
≤
120A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
P-Channel I
SD
≤
-1.2A, di/dt
≤
160A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
Notes:
Parameter
Min. Typ. Max. Units
—
—
—
—
-1.25
—
—
—
—
—
—
—
—
—
40
—
30
—
48
—
37
Conditions
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1.25
21
-16
1.2
-1.2
60
45
72
55
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
T
J
= 25°C, I
S
= -1.8A, V
GS
= 0V
N-Channel
T
= 25°C, I
F
= 1.7A, di/dt = 100A/μs
P-Channel
T
J
= 25°C, I
F
= -1.2A, di/dt = -100A/μs
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Source-Drain Ratings and Characteristics
V
V/°C
V
S
μA
nC
ns
N-Channel
I
D
= 1.7A, V
DS
= 24V, V
GS
= 10V
P-Channel
I
D
= -1.2A, V
DS
= -24V, V
GS
= -10V
N-Channel
V
DD
= 15V, I
D
= 1.7A, R
G
= 6.1
,
R
D
= 8.7
P-Channel
V
DD
= -15V, I
D
= -1.2A, R
G
= 6.2
,
R
D
= 12
N-Channel
V
GS
= 0V, V
DS
= 25V, = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -25V, = 1.0MHz
N-Ch
P-Ch
I
S
Continuous Source Current (Body Diode)
I
SM
Pulsed Source Current (Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
A
V
ns
nC
Pulse width
≤
300μs; duty cycle
≤
2%.
Surface mounted on FR-4 board, t
≤
10sec.
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