參數(shù)資料
型號(hào): IRF7425
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁(yè)數(shù): 1/9頁(yè)
文件大?。?/td> 91K
代理商: IRF7425
Parameter
Max.
-20
-15
-12
-60
2.5
1.6
20
± 12
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70
°
C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
mW/
°
C
V
°
C
V
GS
T
J,
T
STG
-55 to + 150
11/20/01
www.irf.com
1
IRF7425
HEXFET
Power MOSFET
These P-Channel HEXFET
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Description
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
PD- 94022A
Parameter
Max.
50
Units
°
C/W
R
θ
JA
Maximum Junction-to-Ambient
Thermal Resistance
Absolute Maximum Ratings
W
Top View
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
V
DSS
20V
R
DS(on)
max (m
8.2@V
GS
= -4.5V
13@V
GS
= -2.5V
)
I
D
-15A
-13A
SO-8
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