參數(shù)資料
型號(hào)： IRF740A
廠商： VISHAY INTERTECHNOLOGY INC
元件分類(lèi)： JFETs
英文描述： 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 120K
代理商： IRF740A
IRF740A
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
4.9
–––
S
VDS = 50V, ID = 6.0A
Qg
Total Gate Charge
–––
36
ID = 10A
Qgs
Gate-to-Source Charge
–––
9.9
nC
VDS = 320V
Qgd
Gate-to-Drain ("Miller") Charge
–––
16
VGS = 10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
–––
10
–––
VDD = 200V
tr
Rise Time
–––
35
–––
ID = 10A
td(off)
Turn-Off Delay Time
–––
24
–––
RG = 10
tf
Fall Time
–––
22
–––
RD = 19.5,See Fig. 10
Ciss
Input Capacitance
–––
1030 –––
VGS = 0V
Coss
Output Capacitance
–––
170
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
7.7
–––
pF
= 1.0MHz, See Fig. 5
Coss
Output Capacitance
–––
1490 –––
VGS = 0V, VDS = 1.0V, = 1.0MHz
Coss
Output Capacitance
–––
52
–––
VGS = 0V, VDS = 320V, = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
61
–––
VGS = 0V, VDS = 0V to 320V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
–––
630
mJ
IAR
Avalanche Current
–––
10
A
EAR
Repetitive Avalanche Energy
–––
12.5
mJ
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
2.0
V
TJ = 25°C, IS = 10A, VGS = 0V
trr
Reverse Recovery Time
–––
240
360
ns
TJ = 25°C, IF = 10A
Qrr
Reverse RecoveryCharge
–––
1.9
2.9
C
di/dt = 100A/s
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Diode Characteristics
10
40
A
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.0
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
Thermal Resistance
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
400
–––
V
VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.48
–––
V/°C
Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
0.55
VGS = 10V, ID = 6.0A
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250A
–––
25
A
VDS = 400V, VGS = 0V
–––
250
VDS = 320V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
100
VGS = 30V
Gate-to-Source Reverse Leakage
–––
-100
nA
VGS = -30V
IGSS
IDSS
Drain-to-Source Leakage Current
Document Number: 90082
www.vishay.com
2
相關(guān)PDF資料
PDF描述
IRF7410 HEXFET Power MOSFET
IRF7413Z HEXFET Power MOSFET
IRF820AS 2.5 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
IRF9610 1.8 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRFBF20STRR 1.7 A, 900 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF740A_R4944 功能描述:MOSFET 400V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF740AL 功能描述:MOSFET N-Chan 400V 10 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF740ALPBF 功能描述:MOSFET N-Chan 400V 10 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF740APBF 功能描述:MOSFET N-Chan 400V 10 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF740AS 功能描述:MOSFET N-Chan 400V 10 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*