參數(shù)資料
型號(hào): IRF734S
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4.9A I(D) | TO-220AB
中文描述: 晶體管| MOSFET的| N溝道| 450V五(巴西)直| 4.9AI(四)| TO - 220AB現(xiàn)有
文件頁(yè)數(shù): 7/10頁(yè)
文件大?。?/td> 184K
代理商: IRF734S
IRF730AS/L
www.irf.com
7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
Fig 14.
For N-Channel HEXFETS
*
V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
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