參數(shù)資料
型號: IRF7342D2
英文描述: -55V FETKY - MOSFET and Schottky Diode in a SO-8 package
中文描述: - 55V的FETKY - MOSFET和肖特基二極管的SO - 8封裝
文件頁數(shù): 6/10頁
文件大?。?/td> 184K
代理商: IRF7342D2
IRF730AS/L
6
www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
D D
DRIVER
A
15V
20V
Fig 12d.
Typical Drain-to-Source Voltage
Vs. Avalanche Current
25
50
75
100
125
150
0
100
200
300
400
500
600
700
Starting T , Junction Temperature ( C)
E
BOTTOM
ID
2.5A
3.5A
5.5A
TOP
0.0
1.0
2.0
3.0
4.0
5.0
6.0
IAV , Avalanche Current ( A)
540
550
560
570
580
590
600
610
VD
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF7342D2HR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 55V 3.4A 8-Pin SOIC
IRF7342D2PBF 功能描述:MOSFET MOSFT PCh w/Schttky -3.4A 105mOhm 26nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7342D2PBF 制造商:International Rectifier 功能描述:MOSFET With Schottky Diode
IRF7342D2TRHR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 55V 3.4A 8-Pin SOIC T/R
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