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參數(shù)資料
| 型號(hào)： | IRF7341 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 134K |
| 代理商： | IRF7341 |
HEXFET
Power MOSFET
PD -91703
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
02/24/99
Description
l
Generation V Technology
l
Ultra Low On-Resistance
l
Dual N-Channel Mosfet
l
Surface Mount
l
Available in Tape & Reel
l
Dynamic dv/dt Rating
l
Fast Switching
SO-8
V
DSS
= 55V
R
DS(on)
= 0.050
IRF7341
www.irf.com
1
Parameter
Max.
55
4.7
3.8
38
2.0
1.3
0.016
± 20
30
72
5.0
Units
V
V
DS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 70°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10μs
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
A
W/°C
V
V
V
GS
V
GSM
E
AS
dv/dt
T
J,
T
STG
V/ns
°C
-55 to + 150
Parameter
Typ.
–––
Max.
62.5
Units
°C/W
R
θ
JA
Maximum Junction-to-Ambient
Thermal Resistance
W
D1
D1
D2
D2
G1
S2
G 2
S1
Top View
8
1
2
3
4
5
6
7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF7342D2PBF | FETKY MOSFET & Schottky Diode |
| IRF7342PBF | HEXFET㈢ Power MOSFET (VDSS = -55V , RDS(on) = 0.105ヘ) |
| IRF7350PBF | HEXFET㈢ Power MOSFET |
| IRF7353D2PBF | MOSFET / Schottky Diode (VDSS = 30V , RDS(on) = 0.029ヘ , Schottky VF = 0.52V) |
| IRF7389 | HEXFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF7341IPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7341ITRPBF | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 4.7A 8SOIC - Tape and Reel |
| IRF7341PBF | 功能描述:MOSFET 55V DUAL N-CH HEXFET 20V VGS -55V BVDSS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7341Q | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 5.1A 8-Pin SOIC 制造商:International Rectifier 功能描述:MOSFET |
| IRF7341QPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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