參數(shù)資料
型號: IRF733FI
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 3A I(D) | TO-220AB
中文描述: 晶體管| MOSFET的| N溝道| 350V五(巴西)直| 3A條(丁)| TO - 220AB現(xiàn)有
文件頁數(shù): 10/10頁
文件大小: 184K
代理商: IRF733FI
IRF730AS/L
10
www.irf.com
Tape & Reel Information
D
2
Pak
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 19mH
R
G
= 25
, I
AS
= 5.5A. (See Figure 12)
I
SD
5.5A, di/dt
90A/μs, V
DD
V
(BR)DSS
,
T
J
150°C
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Notes:
Pulse width
300μs; duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Uses IRF730A data and test conditions
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE:
439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 5/00
Powered by ICminer.com Electronic-Library Service CopyRight 2003
相關PDF資料
PDF描述
IRF734 450V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRF7341Q 55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
IRF7341QTR TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 55V V(BR)DSS | 5.1A I(D) | SO
IRF7342D2 -55V FETKY - MOSFET and Schottky Diode in a SO-8 package
IRF734S TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4.9A I(D) | TO-220AB
相關代理商/技術參數(shù)
參數(shù)描述
IRF733R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 4.5A I(D) | TO-220AB
IRF734 功能描述:MOSFET N-CH 450V 4.9A TO-220AB RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
IRF7341 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 4.7A 8-Pin SOIC 制造商:International Rectifier 功能描述:MOSFET DUAL NN LOGIC SO-8
IRF7341IPBF 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7341ITRPBF 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 4.7A 8SOIC - Tape and Reel