參數(shù)資料
型號(hào)： IRF6604
廠商： International Rectifier
英文描述： Power MOSFET
中文描述： 功率MOSFET
文件頁(yè)數(shù)： 1/11頁(yè)
文件大?。?/td> 206K
代理商： IRF6604
www.irf.com
1
6/11/03
IRF6604
HEXFET Power MOSFET
R
DS(on)
max
11.5m
@V
GS
= 7.0V
13m
@V
GS
= 4.5V
Notes
through are on page 11
Description
The IRF6604 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging
to achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm
profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly
equipment and vapor phase, infra-red or convection soldering techniques. The DirectFET package allows dual sided cooling
to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6604 balances both low resistance and low charge along with ultra low package inductance to reduce both conduc-
tion and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power
the latest generation of processors operating at higher frequencies. The IRF6604 has been optimized for parameters that
are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 7.0V
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 7.0V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 7.0V
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
Power Dissipation
Linear Derating Factor
T
J
Operating Junction and
T
STG
Storage Temperature Range
Thermal Resistance
Parameter
R
θ
JA
Junction-to-Ambient
R
θ
JA
Junction-to-Ambient
R
θ
JA
Junction-to-Ambient
R
θ
JC
Junction-to-Case
R
θ
J-PCB
Junction-to-PCB Mounted
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount
Techniques
Units
V
A
Pulsed Drain Current
Power Dissipation
Power Dissipation
W
W/°C
°C
Typ.
–––
12.5
20
–––
1.0
Max.
55
–––
–––
3.0
–––
Units
°C/W
-40 to + 150
2.3
1.5
42
0.018
Max.
30
12
9.2
92
±12
49
V
DSS
30V
Qg
17nC
DirectFET
ISOMETRIC
相關(guān)PDF資料
PDF描述
IRF6607 Power MOSFET
IRF6607TR1 Power MOSFET
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IRF6611 DirectFET Power MOSFET
IRF6612 HEXFET Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF6604TR1 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6607 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6607TR1 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6608 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6608TR1 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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