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參數(shù)資料
| 型號： | IRF640B |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 200V N-Channel MOSFET |
| 中文描述： | 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 95K |
| 代理商： | IRF640B |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
IRF640, IRF640S
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’
technology
Low on-state resistance
Fast switching
Low thermal resistance
V
DSS
= 200 V
I
D
= 16 A
R
DS(ON)
≤
180 m
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using
Trench
technology, intended for use in off-line
switchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuits
and general purpose switching applications.
The IRF640 is supplied in the SOT78 (TO220AB) conventional leaded package.
The IRF640S is supplied in the SOT404 (D
2
PAK) surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404 (D
2
PAK)
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 175C
T
j
= 25 C to 175C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
200
200
±
20
16
11
64
136
175
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
d
g
s
1
3
tab
2
1 2 3
tab
1
It is not possible to make connection to pin:2 of the SOT404 package
August 1999
1
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF650A | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 28A I(D) | TO-220AB |
| IRF654A | TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 21A I(D) | TO-220AB |
| IRF7102 | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 50V V(BR)DSS | 2A I(D) | SO |
| IRF7107 | |
| IRF710A | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2A I(D) | TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF640B_FP001 | 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF640B_FP001_Q | 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF640B_FP01F080 | 制造商:Fairchild Semiconductor Corporation 功能描述:N-CH/200V/18A/0.18OHM/SUBSTITU |
| IRF640FI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 10A I(D) | TO-220VAR |
| IRF640FP | 功能描述:MOSFET N-Ch 200 Volt 18 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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