參數(shù)資料
型號: IRF6218PBF
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁數(shù): 1/7頁
文件大?。?/td> 142K
代理商: IRF6218PBF
www.irf.com
1
06/28/04
IRF6218PbF
HEXFET Power MOSFET
R
DS(on)
max
150m @V
GS
= -10V
SMPS MOSFET
Notes
through are on page 7
Reset Switch for Active Clamp
Reset DC-DC converters
Lead-Free
Benefits
Applications
Low Gate to Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
TO-220AB
S
D
G
V
DSS
-150V
I
D
-27A
Absolute Maximum Ratings
Parameter
Units
V
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
A
W
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
W/°C
V/ns
°C
dv/dt
T
J
T
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
–––
0.50
–––
Max.
0.61
–––
62
Units
°C/W
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
1.6
8.2
250
Max.
-150
± 20
-27
-19
-110
300 (1.6mm from case )
10 lbfin (1.1Nm)
-55 to + 175
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