參數(shù)資料
型號: IRF6218
廠商: International Rectifier
英文描述: SMPS MOSFET
中文描述: MOSFET的開關(guān)電源
文件頁數(shù): 4/7頁
文件大?。?/td> 122K
代理商: IRF6218
IRF6218
4
www.irf.com
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
1
10
100
-VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C
100000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-VSD, Source-to-Drain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
-S
TJ = 25°C
TJ = 175°C
VGS = 0V
1
10
100
1000
-VDS, Drain-to-Source Voltage (V)
1
10
100
1000
-D
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
Tc = 25°C
Tj = 175°C
Single Pulse
0
10
20
30
40
50
60
70
80
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
-G
VDS= 120V
VDS= 75V
VDS= 30V
ID= -16A
相關(guān)PDF資料
PDF描述
IRF630NSTRL TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.3A I(D) | TO-263AB
IRF630N Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)
IRF630NL Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)
IRF630NS Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)
IRF630NSTRR TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.3A I(D) | TO-263AB
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