- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384490 > IRF6156 (International Rectifier) FlipFET Power MOSFET PDF資料下載
參數(shù)資料
| 型號： | IRF6156 |
| 廠商： | International Rectifier |
| 英文描述： | FlipFET Power MOSFET |
| 中文描述： | FlipFET功率MOSFET |
| 文件頁數(shù)： | 1/13頁 |
| 文件大小： | 249K |
| 代理商： | IRF6156 |
FlipFET
Power MOSFET
R
SS(on)
max
40m @V
GS1,2
= 4.5V
60m @V
GS1,2
= 2.5V
IRF6156
www.irf.com
1
Description
True chip-scale packaging is available from International Recti-
fier. Through the use of advanced processing techniques and a
unique packaging concept, extremely low on-resistance and the
highest power densities in the industry have been made available
for battery and load management applications. These benefits,
combined with the ruggedized device design that International
Rectifier is well known for,
provide the designer with an
extremely efficient and reliable device.
The
TSSOP-8 package and has a profile of less than .8mm. Com-
bined with the low thermal resistance of the die level device, this
makes the
the best device for applications where
printed circuit board space is at a premium and in extremely thin
application environments such as battery packs, mobile phones
and PCMCIA cards.
package, is one-fifth the footprint of a comparable
Ultra Low
R
SS(on)
per Footprint Area
Low
Thermal Resistance
Bi-Directional N-Channel Switch
Super Low Profile (<.8mm)
Available Tested on Tape & Reel
ESD Protection Diode
V
SS
20V
I
S
±6.5
±5.2
Absolute Maximum Ratings
Parameter
Units
V
V
SS
I
S
@ T
A
= 25°C
I
S
@ T
A
= 70°C
I
SM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Source-to-Source Voltage
Continuous Current, V
GS1
= V
GS2
= 4.5V
Continuous Current, V
GS1
= V
GS2
= 4.5V
Pulsed Current
Power Dissipation
Power Dissipation
A
W
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
mW/°C
V
°C
V
GS
T
J
T
STG
Thermal Resistance
Parameter
Typ.
–––
35
Max.
50
–––
Units
°C/W
R
θ
JA
R
θ
J-PCB
Junction-to-Ambient
Junction-to-PCB
2.5
1.6
20
±12
Max.
20
±6.5
±5.2
33
-55 to + 150
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF620 | 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N溝道增強(qiáng)型功率MOS場效應(yīng)管) |
| IRF6217 | AC 6C 6#16S SKT PLUG |
| IRF630PBF | HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = 0.40ヘ , ID = 9.0A ) |
| IRF630SPBF | HEXFET POWER MOSFET ( VDSS = 200V , RDS(on) = 0.40ヘ , ID = 9.0A ) |
| IRF646 | 14A, 275V, 0.280 Ohm, N-Channel Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF620 | 功能描述:MOSFET N-Chan 200V 5.2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF620 | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
| IRF620_R4941 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6201PBF | 功能描述:MOSFET 20V 1 N-CH HEXFET 2.45mOhms 130nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF6201TRPBF | 功能描述:MOSFET MOSFT 20V 27A 2.5mOhm 2.5V cpbl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。