- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377504 > IRF5NJ3315 (International Rectifier) POWER MOSFET N-CHANNEL(Vdss=150V, Rds(on)=0.08ohm, Id=20A) PDF資料下載
參數(shù)資料
| 型號(hào)： | IRF5NJ3315 |
| 廠商： | International Rectifier |
| 英文描述： | POWER MOSFET N-CHANNEL(Vdss=150V, Rds(on)=0.08ohm, Id=20A) |
| 中文描述： | 功率MOSFET N溝道（減振鋼板基本\u003d 150伏，的Rds（on）\u003d 0.08ohm，身份證\u003d 20A條） |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 115K |
| 代理商： | IRF5NJ3315 |
IRF5NJ3315
2
www.irf.com
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
150
—
Typ
—
0.18
Max Units
—
—
Test Conditions
VGS = 0V, ID = 250
μ
A
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
0.08
VGS = 10V, ID = 12A
2.0
12
—
—
—
—
—
—
4.0
—
25
250
V
VDS = VGS, ID = 250
μ
A
VDS = 15V, IDS = 12A
VDS = 150V ,VGS=0V
VDS = 120V,
VGS = 0V, TJ =125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 12A
VDS = 120V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
95
11
47
25
60
75
60
—
nC
VDD = 75V, ID = 12A,
VGS =10V, RG = 5.1
Measured from the center of
drain pad to center of source pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1370
300
160
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
nH
ns
μ
A
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max
—
—
Units
Test Conditions
1.67
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Min Typ
—
—
—
—
—
Max Units
20
80
1.3
260
1.7
Test Conditions
—
—
—
—
—
V
ns
μ
C
T
j
= 25°C, IS = 12A, VGS = 0V
Tj = 25°C, IF = 12A, di/dt
≤
100A/
μ
s
VDD
≤
25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF5NJ5305 | Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:37; Connector Shell Size:28; Connecting Termination:Solder; Body Style:Straight; Circular Contact Gender:Pin; Gender:Female |
| IRF5NJ540 | POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.052ohm, Id=22A*) |
| IRF5NJ6215 | POWER MOSFET P-CHANNEL(Vdss=-150V, Rds(on)=0.29ohm, Id=-11A) |
| IRF5NJ9540 | POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A) |
| IRF5Y31N20 | Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF5NJ3315SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 150V 20A 3SMD-1 - Bulk |
| IRF5NJ3315SCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 150V 20A 3SMD-0.5 - Bulk |
| IRF5NJ5305 | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 55V 22A 3SMD-0.5 - Bulk 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 55V 22A 3-Pin SMD-0.5 制造商:International Rectifier 功能描述:Single P-Channel 55 V 75 W 75 nC Hexfet Power Mosfet Surface Mount - SMD-0.5 制造商:International Rectifier 功能描述:HEXFET, HiRel, Gen 5 |
| IRF5NJ5305SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 55V 22A 3SMD-1 - Bulk |
| IRF5NJ5305SCX | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 55V 22A 3SMD-1 - Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。