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參數(shù)資料
| 型號(hào)： | IRF3515STRR |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 41A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 150伏五（巴西）直| 41A條（丁）|對(duì)263AB |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 162K |
| 代理商： | IRF3515STRR |
IRF3515S/L
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0
20
40
60
80
100
120
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
25A
V
= 30V
DS
V
= 75V
DS
V
= 120V
DS
0.1
1
10
100
1000
0.2
0.6
1.0
1.4
1.8
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
°
T = 175 C
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 175°
= 25°
J
C
V , Drain-to-Source Voltage (V)
D
I
10us
100us
1ms
10ms
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
C
100000
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
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