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參數(shù)資料
| 型號(hào)： | IRF3103 |
| 廠商： | InterFET Corporation |
| 英文描述： | HEXFET㈢ Power MOSFET |
| 中文描述： | ㈢的HEXFET功率MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 103K |
| 代理商： | IRF3103 |
HEXFET
Power MOSFET
IRL3103
PD - 9.1337C
l
Logic-Level Gate Drive
l
Advanced Process Technology
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
V
DSS
= 30V
R
DS(on)
= 0.014
I
D
= 64A
S
D
G
TO-220AB
8/25/97
Parameter
Min.
––––
––––
––––
Typ.
––––
0.50
––––
Max.
1.4
––––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Description
Parameter
Max.
64
45
220
110
0.71
±16
240
34
11
5.0
-55 to + 175
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
°C
300 (1.6mm from case)
10 lbfin (1.1Nm)
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