參數(shù)資料
型號(hào)： IRF2807STRL
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 82A I(D) | TO-263AB
中文描述： 晶體管| MOSFET的| N溝道| 75V的五（巴西）直| 82A條（?。﹟對(duì)263AB
文件頁(yè)數(shù)： 7/9頁(yè)
文件大?。?/td> 151K
代理商： IRF2807STRL
www.irf.com
7
Fig 15.
Typical Avalanche Current Vs.Pulsewidth
Fig 16.
Maximum Avalanche Energy
Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 15, 16).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
I
av
=
2 T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
T/ Z
thJC
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
1
10
100
1000
10000
A
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming
Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
EA
TOP Single Pulse
BOTTOM 10% Duty Cycle
ID = 104A
相關(guān)PDF資料
PDF描述
IRF2807STRR TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 82A I(D) | TO-263AB
IRF3007L 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
IRF3007S 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
IRF3205STRL TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 110A I(D) | TO-263AB
IRF3205STRR TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 110A I(D) | TO-263AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF2807STRLPBF 功能描述:MOSFET MOSFT 75V 82A 13mOhm 106.7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF2807STRR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 82A I(D) | TO-263AB
IRF2807STRRHR 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 75V 82A 3PIN D2PAK - Tape and Reel
IRF2807STRRPBF 功能描述:MOSFET 75V 1 N-CH HEXFET 13mOhms 106.7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF2807Z 功能描述:MOSFET N-CH 75V 75A TO-220AB RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*