參數(shù)資料
型號(hào)： IRF2804LPBF
廠商： International Rectifier
英文描述： AUTOMOTIVE MOSFET
中文描述： 汽車MOSFET的
文件頁數(shù)： 2/12頁
文件大?。?/td> 771K
代理商： IRF2804LPBF
2
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C,
L=0.24mH, R
G
= 25
, I
AS
= 75A, V
GS
=10V.
Part not recommended for use above this value.
I
SD
≤
75A, di/dt
≤
220A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to 80%
V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D
2
Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Max R
DS(on)
for D
2
Pak and TO-262 (SMD) devices.
TO-220 device will have an Rth value of 0.45°C/W.
S
D
G
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
Β
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
SMD
Static Drain-to-Source On-Resistance
R
DS(on)
TO-220 Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Min.
40
–––
–––
–––
2.0
130
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
0.031
–––
1.5
2.0
1.8
2.3
–––
4.0
–––
–––
–––
20
–––
250
–––
200
–––
-200
160
240
41
62
66
99
13
–––
120
–––
130
–––
130
–––
4.5
–––
V
V/°C
m
V
S
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
nC
ns
nH
Between lead,
6mm (0.25in.)
from package
L
S
Internal Source Inductance
–––
7.5
–––
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Diode Characteristics
Parameter
I
S
Continuous Source Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
6450
1690
840
5350
1520
2210
–––
–––
–––
–––
–––
–––
pF
Min.
–––
Typ. Max. Units
–––
270
(Body Diode)
Pulsed Source Current
A
I
SM
–––
–––
1080
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
56
67
1.3
84
100
V
ns
nC
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 10V, I
D
= 75A
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 75A
V
GS
= 10V, I
D
= 75A
T
J
= 25°C, I
F
= 75A, V
DD
= 20V
di/dt = 100A/μs
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 32V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
V
GS
= 10V
MOSFET symbol
Conditions
R
G
= 2.5
I
D
= 75A
V
DS
= 32V
V
GS
= 10V
V
DD
= 20V
I
D
= 75A
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參數(shù)描述
IRF2804PBF 功能描述:MOSFET MOSFT 40V 280A 2.3mOhm 160nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF2804PBF_10 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET?? Power MOSFET
IRF2804S 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 40V 280A 3-Pin(2+Tab) D2PAK
IRF2804S-7P 功能描述:MOSFET N-CH 40V 160A D2PAK7 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRF2804S-7PPBF 功能描述:MOSFET 40V 1 N-CH HEXFET 1.6mOhms 170nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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