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參數(shù)資料
| 型號： | IRF246 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 14 A, 275 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 70K |
| 代理商： | IRF246 |
5-3
IRF244, IRF245, IRF246, IRF247
Input Capacitance
C
ISS
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz
(Figure 11)
-
1300
-
pF
Output Capacitance
C
OSS
-
320
-
pF
Reverse-Transfer Capacitance
C
RSS
-
69
-
pF
Internal Drain Inductance
L
D
Measured Between
the Contact Screw on
the Flange that is
Closer to Source and
Gate Pins and the
Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
5.0
-
nH
Internal Source Inductance
L
S
Measured From The
Source Lead, 6mm
(0.25in) From the
Flange and the
Source Bonding Pad
-
12.5
-
nH
Junction to Case
R
θ
JC
-
-
1.0
o
C/W
Junction to Ambient
R
θ
JA
Free Air Operation
-
-
30
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
-
-
14
A
Pulse Source to Drain Current
(Note 3)
I
SM
-
-
56
A
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= 14A, V
GS
= 0V (Figure 13)
T
J
= 25
o
C, I
SD
= 14A, dI
SD
/dt = 100A/
μ
s
T
J
= 25
o
C, I
SD
= 14A, dI
SD
/dt = 100A/
μ
s
-
-
1.8
V
Reverse Recovery Time
t
rr
150
300
640
ns
Reverse Recovered Charge
Q
RR
1.6
3.4
7.2
μ
C
Forward Turn-On Time
t
ON
Intrinsic Turn-On Time is Negligible, Turn-On
Speed is Substantially Controlled by L
S
+ L
D
-
-
-
-
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 50V, starting T
J
= 25
o
C, L = 4.5mH, R
G
= 25
, peak I
AS
= 14A. See Figures 15, 16.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
L
S
L
D
G
D
S
G
D
S
相關PDF資料 |
PDF描述 |
|---|---|
| IRF247 | 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs |
| IRF245 | 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs |
| IRF540, | 28A, 100V, 0.077 Ohm,N-Channel PowerMOSFET(28A, 100V, 0.077 Ohm,N溝道增強型功率MOS場效應管) |
| IRF640 | 18A, 200V, 0.180 Ohm,, N-Channel PowerMOSFET(18A, 200V, 0.180 Ohm,N溝道增強型功率MOS場效應管) |
| IRF710 | 2.0A, 400V, 3.600 Ohm,N-Channel PowerMOSFET(2.0A, 400V, 3.600 Ohm,N溝道增強型功率MOS場效應管) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRF247 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs |
| IRF24D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| IRF24ER100K | 制造商:Vishay Dale 功能描述:IND CHOKE 10UH 10% 7.96MHZ 40 FERRITE 370MA AXL - Tape and Reel |
| IRF24ER101K | 制造商:Vishay Dale 功能描述:IND CHOKE 100UH 10% 2.52MHZ 50 FERRITE 165MA AXL - Tape and Reel |
| IRF24ER102K | 制造商:Vishay Dale 功能描述:IND CHOKE 1K UH 10% 796KHZ 50 FERRITE 60MA AXL - Tape and Reel |
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