參數(shù)資料
型號(hào)： IRF245
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
中文描述： 13 A, 250 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
文件頁數(shù)： 2/7頁
文件大小： 70K
代理商： IRF245
5-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF244
250
250
14
8.8
56
±
20
125
1.0
550
-55 to 150
IRF245
250
250
13
8.0
52
±
20
125
1.0
550
-55 to 150
IRF246
275
275
14
8.8
56
±
20
125
1.0
550
-55 to 150
IRF247
275
275
13
8.0
52
±
20
125
1.0
550
-55 to 150
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . V
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
T
C
= 100
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . T
L
Package Body for 10s, see TB334 . . . . . . . . . . . . . . . . . .T
pkg
300
260
300
260
300
260
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
μ
A
(Figure 10)
IRF244, IRF245
250
-
-
V
IRF246, IRF247
275
-
-
V
Gate to Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
-
4.0
V
Zero-Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
25
μ
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V,
T
J
= 125
o
C
-
-
250
μ
A
On-State Drain Current (Note 2)
I
D(ON)
V
DS
> I
D(ON) x
r
DS(ON)MAX
, V
GS
= 10V
IRF244, IRF246
14
-
-
A
IRF245, IRF247
13
-
-
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
Drain to Source On-State Resistance (Note 2)
r
DS(ON)
V
GS
= 10V, I
D
= 8A, (Figures 8, 9)
IRF244, IRF246
-
0.20
0.28
IRF245, IRF247
-
0.24
0.34
Forward Transconductance (Note 2)
g
fs
V
DS
≥
50V, I
D
= 8A, (Figure 12)
6.7
10
-
S
Turn-On Delay Time
t
d(ON)
V
DD
= 125V, I
D
≈
14A, R
G
= 9.1
, R
L
= 8.9
(Figures 17, 18) MOSFET Switching Times
are Essentially Independent of Operating
Temperature
-
16
24
ns
Rise Time
t
r
-
67
100
ns
Turn-Off Delay Time
t
d(OFF)
-
53
80
ns
Fall Time
t
f
-
49
74
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 10V, I
D
= 14A, V
DS
= 0.8 x Rated
BV
DSS
, I
g(REF)
= 1.5mA,
(Figures 14, 19, 20) Gate Charge is
Essentially Independent of Operating
Temperature
-
39
59
nC
Gate to Source Charge
Q
gs
-
6.6
-
nC
Gate to Drain “Miller” Charge
Q
gd
-
20
-
nC
IRF244, IRF245, IRF246, IRF247
相關(guān)PDF資料
PDF描述
IRF540, 28A, 100V, 0.077 Ohm,N-Channel PowerMOSFET(28A, 100V, 0.077 Ohm,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
IRF640 18A, 200V, 0.180 Ohm,, N-Channel PowerMOSFET(18A, 200V, 0.180 Ohm,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
IRF710 2.0A, 400V, 3.600 Ohm,N-Channel PowerMOSFET(2.0A, 400V, 3.600 Ohm,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
IRF9233 CAP CER 250VAC 330PF X7R 1808
IRF9231 -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF246 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
IRF247 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
IRF24D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC
IRF24ER100K 制造商:Vishay Dale 功能描述:IND CHOKE 10UH 10% 7.96MHZ 40 FERRITE 370MA AXL - Tape and Reel
IRF24ER101K 制造商:Vishay Dale 功能描述:IND CHOKE 100UH 10% 2.52MHZ 50 FERRITE 165MA AXL - Tape and Reel
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*