參數(shù)資料
型號(hào)： IRF235
廠商： HARRIS SEMICONDUCTOR
元件分類(lèi)： 功率晶體管
英文描述： 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs
中文描述： 6.5 A, 250 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 69K
代理商： IRF235
5-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF234
250
250
8.1
5.1
32
±
20
75
0.6
180
-55 to 150
IRF235
250
250
6.5
4.1
26
±
20
75
0.6
180
-55 to 150
IRF236
275
275
8.1
5.1
32
±
20
75
0.6
180
-55 to 150
IRF237
275
275
6.5
4.1
26
±
20
75
0.6
180
-55 to 150
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . V
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
T
C
= 100
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . .T
pkg
300
260
300
260
300
260
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
μ
A, (Figure 10)
IRF234, IRF235
250
-
-
V
IRF236, IRF237
275
-
-
V
Gate to Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
-
4.0
V
Zero-Gate Voltage Drain Current
I
DSS
V
DS
= Rated BV
DSS
, V
GS
= 0V
-
-
25
μ
A
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V T
J
=125
o
C
-
-
250
μ
A
On-State Drain Current (Note 2)
I
D(ON)
V
DS
> I
D(ON) x
r
DS(ON)MAX
, V
GS
= 10V,
(Figure 7)
IRF234, IRF236
8.1
-
-
A
IRF235, IRF237
6.5
-
-
A
Gate to Source Leakage
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
Drain to Source On-State Resistance (Note 2)
r
DS(ON)
V
GS
= 10V, I
D
= 4.1A, (Figures 8, 9)
IRF234, IRF236
-
0.32
0.45
IRF235, IRF237
-
0.48
0.68
Forward Transconductance (Note 2)
g
fs
V
DS
≥
50V, I
D
= 4.1A, (Figure 12)
2.9
4.3
-
S
Turn-On Delay Time
t
d(ON)
V
DD
= 125V, I
D
≈
8.1A, R
G
= 12
, R
L
= 1.1
V
GS
= 10V, (Figures 17, 18)
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-
9.1
14
ns
Rise Time
t
r
-
23
35
ns
Turn-Off Delay Time
t
d(OFF)
-
31
47
ns
Fall Time
t
f
-
19
29
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 10V, I
D
= 8.1A, V
DS
= 0.8 x Rated BV
DSS
I
G(REF)
= 1.5mA, (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
-
24
35
nC
Gate to Source Charge
Q
gs
-
5.1
-
nC
Gate to Drain “Miller” Charge
Q
gd
-
12
-
nC
IRF234, IRF235, IRF236, IRF237
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF236 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs
IRF237 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs
IRF-24 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Inductors
IRF-24_08 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Inductors
IRF240 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) TO-3 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 18A 3PIN TO-204AE - Bulk 制造商:International Rectifier 功能描述:Single N-Channel 200 V 125 W 60 nC Hexfet Transistor Through Hole - TO-3 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 10V, 18A TO-204AE; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:10V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:200V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: No
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