參數(shù)資料
型號(hào): IRF234
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs
中文描述: 8.1 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
文件頁(yè)數(shù): 5/7頁(yè)
文件大?。?/td> 69K
代理商: IRF234
5-5
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
GATE VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
2
4
6
8
0
10
15
12
9
0
6
I
D
,
80ms PULSE TEST
3
V
GS
= 10V
V
GS
= 7V
V
GS
= 5V
V
GS
= 6V
V
GS
= 4.0V
V
GS
= 8V
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
100
10
1
0.1
0
2
4
6
8
10
80
μ
s PULSE TEST
V
DS
=
2 x V
GS
T
J
= 150
o
C
T
J
= 25
o
C
32
I
D,
DRAIN CURRENT (A)
8
16
24
0
40
4.0
3.2
2.4
0
1.6
D
V
GS
= 20V
0.8
V
GS
= 10V
80
μ
s PULSE TEST
3.0
1.8
0.6
80
-60
T
J
, JUNCTION TEMPERATURE (
o
C)
2.4
1.2
0
0
60
120
160
O
-20
-40
20
40
100
140
V
GS
= 10V
I
D
= 4.1A
1.25
1.05
0.85
60
-60
T
J
, JUNCTION TEMPERATURE (
o
C)
N
1.15
0.95
0.75
-20
20
100
160
B
0
-40
40
80
120 140
I
D
= 250
μ
A
1
10
100
C
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
1500
1200
900
600
300
0
C
RSS
C
ISS
C
OSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
IRF234, IRF235, IRF236, IRF237
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IRF234NL 制造商:IR 功能描述:MOSFET
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IRF236 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs
IRF237 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs
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