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參數(shù)資料
| 型號： | IRF2204STRR |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 170A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 40V的五（巴西）直| 170A條（丁）|對263AB |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 224K |
| 代理商： | IRF2204STRR |
Parameter
Max.
170
120
850
200
1.3
± 20
460
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
A
W
W/°C
V
mJ
A
mJ
V
GS
E
AS
I
AR
E
AR
T
J
T
STG
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
HEXFET
Power MOSFET
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the lastest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features to this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications
and a wide variety of other applications.
S
D
G
Absolute Maximum Ratings
V
DSS
= 40V
R
DS(on)
= 3.6m
I
D
= 170A
Description
07/01/02
www.irf.com
1
●
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
●
●
●
●
●
Features
Typical Applications
Electric Power Steering
14 Volts Automotive Electrical Systems
●
●
AUTOMOTIVE MOSFET
Thermal Resistance
Parameter
Typ.
–––
–––
Max.
0.75
40
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient
PD - 94502
IRF2204S
IRF2204L
D
2
Pak
IRF2204S
TO-262
IRF2204L
°C/W
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