參數(shù)資料
型號(hào): IRF1902PBF
廠商: International Rectifier
英文描述: Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.0 to 5.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
中文描述: HEXFET功率MOSFET
文件頁(yè)數(shù): 3/9頁(yè)
文件大?。?/td> 144K
代理商: IRF1902PBF
www.irf.com
3
Fig 3.
Typical Transfer Characteristics
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID
2.25V
20μs PULSE WIDTH
Tj = 25°C
TOP VGS
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.25V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
ID
2.25V
20μs PULSE WIDTH
Tj = 150°C
TOP VGS
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
BOTTOM 2.25V
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS, Gate-to-Source Voltage (V)
1.00
10.00
100.00
ID
(
)
TJ = 25°C
TJ = 175°C
VDS = 15V
20μs PULSE WIDTH
-60
-40
-20
0
20
40
60
80
100
120
140
160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature
( C)
R
(
D
V
=
I
=
GS
D
4.5V
4.2A
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