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參數(shù)資料
| 型號： | IRF1704 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 40V的，的Rds（on）\u003d 0.004ohm，身份證\u003d 170A章） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 102K |
| 代理商： | IRF1704 |
IRF1704
HEXFET
Power MOSFET
Specifically designed for Automotive applications, this HEXFET
power
MOSFET has a 200°C max operating temperature with a Stripe Planar
design that utilizes the latest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of this HEXFET
power
MOSFET are fast switching speed and improved repetitive avalanche rating.
The continuing technology leadership of Internationl Rectifier provides 200°C
operating temperature in a plastic package. At high ambient temperatures, the
IRF1704 can carry up to 20% more current than similar 175 °C Tj max devices
in the same package outline. This makes this part ideal for existing and
emerging under-the-hood automotive applications such as Electric Power
Steering (EPS), Fuel / Water Pump Control and wide variety of other
applications.
Absolute Maximum Ratings
S
D
G
Parameter
Max.
170
120
680
230
1.3
± 20
670
100
23
1.9
Units
I
D
@ T
C
= 25
°
C
I
D
@ T
C
= 100
°
C
I
DM
P
D
@T
C
= 25
°
C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/
°
C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
T
LEAD
-55 to + 200
175
°
C
300 (1.6mm from case )
10 lbf
in (1.1N
m)
°
C
Parameter
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°
C/W
Thermal Resistance
V
DSS
= 40V
R
DS(on)
= 0.004
I
D
= 170A
200
°
C Operaing Temperature
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Repetitive Avalanche Allowed
up to Tj Max
Automotive Qualified (Q101)
Description
02/13/02
1
TO-220AB
Benefits
AUTOMOTIVE MOSFET
PD -94012B
相關(guān)PDF資料 |
PDF描述 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF1730G | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=400V, Rds(on)=1.0ohm, Id=3.7A) |
| IRF1902 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=20V) |
| IRF1902GPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF1902GTRPBF | 功能描述:MOSFET MOSFT 20V 4.2A 85mOhm 5nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF1902PBF | 功能描述:MOSFET 20V 1 N-CH HEXFET 85mOhms 5nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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