- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄377502 > IRF1407STRR (International Rectifier) TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB PDF資料下載
參數(shù)資料
| 型號(hào)： | IRF1407STRR |
| 廠商： | International Rectifier |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 75V的五（巴西）直| 100號(hào)A（丁）|對(duì)263AB |
| 文件頁(yè)數(shù)： | 7/11頁(yè) |
| 文件大?。?/td> | 159K |
| 代理商： | IRF1407STRR |
IRF1407S/IRF1407L
www.irf.com
7
Fig 15.
Typical Avalanche Current Vs.Pulsewidth
Fig 16.
Maximum Avalanche Energy
Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25
°
C in Figure 15, 16).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·
f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
P
D (ave)
= 1/2 ( 1.3
·
BV
·
I
av
) =
T/ Z
thJC
I
av
=
2
T/ [1.3
·
BV
·
Z
th
]
E
AS (AR)
= P
D (ave)
·
t
av
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
1
10
100
1000
A
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche
pulsewidth,
assuming
Tj = 25
°
C due to
avalanche losses
tav
0.01
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (
°
C)
0
100
200
300
400
EA
TOP Single Pulse
BOTTOM 10% Duty Cycle
ID = 78A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF1407 | Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A) |
| IRF1503 | AUTOMOTIVE MOSFET |
| IRF150 | TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.055ohm, Id= 38A) |
| IRF150 | N-CHANNEL POWER MOSFETS |
| IRF150 | HIGH VOLTAGE POWER MOSFET DIE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF1407STRRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 75V 100A 3-Pin(2+Tab) D2PAK T/R |
| IRF1407STRRPBF | 功能描述:MOSFET 75V 1 N-CH HEXFET 7.8mOhms 160nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF140R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 28A I(D) | TO-204AE |
| IRF140SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL POWER MOSFET |
| IRF141 | 制造商:International Rectifier 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。