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參數(shù)資料
| 型號(hào)： | IRF.F180 |
| 廠商： | International Rectifier |
| 英文描述： | FAST THYRISTOR/ DIODE and MAGN-A-pak Power Modules THYRISTOR/ THYRISTOR |
| 中文描述： | 快速晶閘管/二極管和磁共振-甲柏電源模塊晶閘管/晶閘管 |
| 文件頁(yè)數(shù)： | 8/8頁(yè) |
| 文件大?。?/td> | 238K |
| 代理商： | IRF.F180 |
IRK.F180.. Series
8
Bulletin I27100 rev. C 03/01
www.irf.com
Fig. 13 - Frequency Characteristics
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
Fig. 15 - Gate Characteristics
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
50 Hz
400
1000
5000
150
2500
P
Pulse Basewidth ( s)
Snubber circuit
R s
Cs
V = 80% V
tp
1E4
IRK.F180.. Series
Trapezoidal pulse
T = 60 C di/dt 50A/ s
DRM
E1
1E1
1E2
1E3
1E4
50 Hz
400
100 0
5000
150
2500
Pulse Basewidth ( s)
IRK.F180.. Series
Trapezoidal pulse
T = 60 C di/dt 100A/ s
Snubber circuit
R s
Cs
V = 80% V
tp
DRM
0.1
1
10
100
0.01
0.1
1
10
100
VGD
IGD
(b)
(a)
T
T
T
(2)
(3)
Instantaneous Gate Current (A)
I
a) Recommended load line for
rated di/dt : 10V, 10ohms
b) Recommended load line for
<=30% rated di/dt : 10V, 20ohms
Rectangular gate pulse
(1) PGM = 8W, tp = 25ms
(2) PGM = 20W, tp = 1ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 80W, tp = 2.5ms
IRK.F180.. Series Frequency Limited by PG(AV)
(1)
(4)
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
10 joules per pulse
5
2.5
1
0.5
0.25
0.1
0.05
IRK.F180.. Series
Sinusoidal pulse
P
Pulse Basewidth ( s)
tp
1E4
E1
1E1
1E2
1E3
1E4
10 joules per pulse
5
2.5
1
0.5
0.25
0.1
0.05
Pulse Basewidth ( s)
IRK.F180.. Series
Trapezoidal pulse
di/dt 50A/ s
tp
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