參數(shù)資料
型號(hào)： IR2214
廠商： International Rectifier
英文描述： HALF-BRIDGE GATE DRIVER IC
中文描述： 半橋柵極驅(qū)動(dòng)IC
文件頁(yè)數(shù)： 21/28頁(yè)
文件大?。?/td> 308K
代理商： IR2214
21
IR2214/IR22141(SS)
www.irf.com
ADVANCE DATA
Sizing tips
Bootstrap supply
The V
voltage provides the supply to the high
side driver circuitry of the IR2214. This supply
sits on top of the V
S
voltage and so it must be
floating.
The bootstrap method to generate V
supply
can be used with IR2214. The bootstrap supply
is formed by a diode and a capacitor connected
as in figure 19.
Figure 19:
bootstrap supply schematic
This method has the advantage of being simple
and low cost but may force some limitations on
duty-cycle and on-time since they are limited by
the requirement to refresh the charge in the boot-
strap capacitor.
Proper capacitor choice can reduce drastically
these limitations.
Bootstrap capacitor sizing
To size the bootstrap capacitor, the first step is
to establish the minimum voltage drop (
V
)
that we have to guarantee when the high side
IGBT is on.
bootstrap
diode
I
bootstrap
capacitor
VB
VS
VCC
HOP
HON
SSDH
DC+
bootstrap
resistor
COM
V
CC
V
BS
V
F
V
GE
V
CEon
V
FP
I
LOAD
motor
R
boot
If
V
is the minimum gate emitter voltage we
want to maintain, the voltage drop must be:
under the condition:
where
V
is the IC voltage supply,
V
is boot-
strap diode forward voltage,
V
is emitter-col-
lector voltage of low side IGBT and
V
is the
high-side supply undervoltage negative going
threshold.
Now we must consider the influencing factors
contributing V
BS
to decrease:
- IGBT turn on required Gate charge (
Q
G
);
- IGBT gate-source leakage current (
I
LK_GE
);
- Floating section quiescent current (
I
QBS
);
- Floating section leakage current (
I
LK
)
- Bootstrap diode leakage current (
I
LK_DIODE
);
- Desat diode bias when on (
I
)
- Charge required by the internal level shifters
(
Q
); typical 20nC
- Bootstrap capacitor leakage current (
I
LK_CAP
);
- High side on time (
T
HON
).
I
is only relevant when using an electrolytic
capacitor and can be ignored if other types of
capacitors are used. It is strongly recommend
using at least one low ESR ceramic capacitor
(paralleling electrolytic and low ESR ceramic
may result in an efficient solution).
Then we have:
CEon
V
GE
F
CC
BS
V
V
V
V
≤
min
>
BSUV
GE
V
V
min
+
+
+
+
=
QBS
I
GE
LK
LS
G
TOT
I
I
I
I
Q
Q
Q
+
_
(
HON
T
DS
CAP
LK
DIODE
LK
LK
I
+
+
+
)
_
_
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IR22141 制造商:IRF 制造商全稱:International Rectifier 功能描述:HALF-BRIDGE GATE DRIVER IC
IR22141SS 功能描述:IC DRIVER HALF BRIDGE SGL 24SSOP RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:50 系列:- 配置:高端 輸入類型:非反相 延遲時(shí)間:200ns 電流 - 峰:250mA 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:600V 電源電壓:12 V ~ 20 V 工作溫度:-40°C ~ 125°C 安裝類型:通孔 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-DIP 包裝:管件 其它名稱:*IR2127
IR22141SSPBF 功能描述:功率驅(qū)動(dòng)器IC 200V HALF BRDG DRVR IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
IR22141SSPBF 制造商:International Rectifier 功能描述:Driver IC
IR22141SSTRPBF 功能描述:功率驅(qū)動(dòng)器IC Hlf Brdg Drvr IC for Pwr Swtch App RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
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