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參數(shù)資料
| 型號： | IR2130D |
| 英文描述： | IR2130D |
| 中文描述： | IR2130D |
| 文件頁數(shù)： | 1/21頁 |
| 文件大小： | 170K |
| 代理商： | IR2130D |
Symbol
V
B1,2,3
V
S1,2,3
V
HO1,2,3
V
CC
V
SO
V
LO1,2,3
V
IN
V
FLT
V
CAO
V
CA-
dVS/dt
P
D
R
thJA
T
j
T
S
T
L
Parameter
Min.
-0.3
V
SO
- 5
V
S1,2,3
- 0.3
-0.3
-5
V
SO
- 0.3
-0.3
-0.3
-0.3
-0.3
—
—
—
-55
-55
—
Max.
V
S1,2,3
+ 20
V
SO
+ 400
V
S1,2,3
+ 0.3
20
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
50
1.5
70
125
150
300
Units
High Side Floating Supply Absolute Voltage
High Side Floating Supply Offset Voltage
High Side Output Voltage
Low Side Fixed Supply Voltage
Low Side Driver Return
Low Side Output Voltage
Logic
Input Voltage (HIN, LIN & SD)
Fault
Output Voltage
Operational Amplifier Output Voltage
Operational amplifier Inverting Input Voltage
Allowable Offset Supply Voltage Transient (Fig. 16)
Package Power Dissipation @ TA< = 25°C (Fig. 19)
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperatue
Lead Temperature (Soldering, 10 seconds)
Weight
www.irf.com
V
V/nS
W
°C/W
°C
6.1 (typical)
g
Features
n
Hermetic
n
Floatingchanneldesignedforbootstrap
operation
Fully operational to +400V
Tolerant to negative transient voltage
dV/dt immune
n
Gate drive supply range from 10 to 20V
n
Undervoltage lockout for all channels
n
Over-current shutdown turns off all six drivers
n
Independent half-bridge drivers
n
Matched propagation delay for both channels
n
Outputs in phase with inputs
Description
The IR2130D is a high voltage, high speed power MOSFET
and IGBT driver with three independent high and low side
referenced output channels. Proprietary HVIC technology
enables ruggedized monolithic construction. Logic inputs
are compatible with 5V CMOS or LSTTL outputs. A ground-
referenced operational amplifier provides analog feedback
of bridge current via an external current sense resistor. A
current trip function which terminates all six outputs is also
derived from this resistor.
PD-60022B
IR2130D
3-PHASE DRIVER
Product Summary
V
OFFSET
400V max.
I
O
+/-
200 mA / 420 mA
V
OUT
10 - 20V
t
on/off
(typ.)
675 & 425 ns
Deadtime (typ.)
0.9 μs
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to Vso. The Thermal Resistance and Power Dissipation ratings are measured
under board mounted and still air conditions.
3/1/00
An open drain
FAULT
signal indicates if an over-
current or undervoltage shutdown has occurred.
The output driverhgre a high pulse current
buffer stage designed for minimum driver cross-con
duction. Propagation delays are matched to simplify
use at high frequencies. The floating channels can
be used to drive N-channel power MOSFETs or
IGBTs in the high side configuration which operate
up to 400 volts.
1
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