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參數(shù)資料
| 型號： | IR2109 |
| 廠商： | International Rectifier, Corp. |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | high voltage,high speed power MOSFET and IGBT drivers |
| 中文描述： | 高壓，高速功率MOSFET和IGBT驅(qū)動器 |
| 文件頁數(shù)： | 4/22頁 |
| 文件大?。?/td> | 321K |
| 代理商： | IR2109 |
IR2106(4)
(S)
4
www.irf.com
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, V
SS
= COM and T
A
= 25
°
C unless otherwise specified. The V
IL
, V
IH
and I
IN
parameters are
referenced to V
SS
/COM and are applicable to the respective input leads. The V
O
, I
O
and Ron parameters are referenced to
COM and are applicable to the respective output leads: HO and LO.
Symbol
Definition
Min.
2.9 — —
— — 0.8
—
0.8
Typ. Max. Units Test Conditions
V
IH
V
IL
V
OH
V
OL
I
LK
I
QBS
I
QCC
I
IN+
Logic “1” input voltage (IR2106(4))
V
CC
= 10V to 20V
V
CC
= 10V to 20V
I
O
= 20 mA
I
O
= 20 mA
V
B
= V
S
= 600V
V
IN
= 0V or 5V
V
IN
= 0V or 5V
Logic “0” input voltage (IR2106(4))
High level output voltage, V
BIAS
- V
O
Low level output voltage, V
O
Offset supply leakage current
1.4
—
0.3
0.6
—
—
50
Quiescent V
BS
supply current
Quiescent V
CC
supply current
Logic “1” input bias current
20
75
130
60
120
180
V
IN
= 5V (IR2106(4))
— 5 20
I
IN-
Logic “0” input bias current
V
IN
= 0V (IR2106(4))
— — 2
8.0
V
CCUV+
V
BSUV+
V
CCUV-
V
BSUV-
V
CCUVH
V
BSUVH
I
O+
V
CC
and V
BS
supply undervoltage positive going
threshold
8.9
9.8
V
CC
and V
BS
supply undervoltage negative going
threshold
7.4
8.2
9.0
Hysteresis
0.3
0.7
—
Output high short circuit pulsed current
120
200
—
V
O
= 0V,
PW
≤
10
μ
s
V
O
= 15V,
PW
≤
10
μ
s
I
O-
Output low short circuit pulsed current
250
350
—
V
μ
A
mA
V
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| IR21091STRPBF | 功能描述:功率驅(qū)動器IC HALF BRDG DRVR 600V 120mA 750ns RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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