參數(shù)資料
型號(hào)： IR180LM12CS05
元件分類： 參考電壓二極管
英文描述： 1200 V, SILICON, RECTIFIER DIODE
封裝： WAFER
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 109K
代理商： IR180LM12CS05
1
www.irf.com
Junction Size:
Square 180 mils
Wafer Size:
4"
V
RRM
Class:
1000 and 1200 V
Passivation Process:
Glassivated MOAT
Reference IR Packaged Part:
20ETF Series
FAST RECOVERY DIODES
IR180LM..CS05CB SERIES
Major Ratings and Characteristics
Parameters
Units
Test Conditions
V
FM
Maximum Forward Voltage
1350 mV
T
J
= 25°C, I
F
= 20 A
V
RRM
Reverse Breakdown Voltage Range
1000 and 1200 V T
J
= 25°C, I
RRM
= 100 μA
(1)
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Nominal Front Metal Composition, Thickness
100% Al, (20 μm)
Chip Dimensions
180 x 180 mils (4.57x4.57 mm) - see drawing
Wafer Diameter
100 mm, with std. < 110 > flat
Wafer Thickness
260 μm
Maximum Width of Sawing Line
45 μm
Reject Ink Dot Size
0.25 mm diameter minimum
Ink Dot Location
See drawing
Recommended Storage Environment
Storage n original container, n dessicated
nitrogen, with no contamination
Bulletin I0125J 07/97
(1)
Nitrogen flow on die edge.
相關(guān)PDF資料
PDF描述
IRKC162-04 160 A, 400 V, SILICON, RECTIFIER DIODE
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