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參數(shù)資料
| 型號： | IR082HD4C10U-P2 |
| 廠商： | International Rectifier |
| 英文描述： | HIGH VOLTAGE HALF BRIDGE |
| 中文描述： | 高壓半橋 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 50K |
| 代理商： | IR082HD4C10U-P2 |
Description
The IR062HD4C10U-P2 / IR082HD4C10U-P2 are
high voltage, high speed half bridges. Proprietary
HVIC and latch immune CMOS technologies,
along with the power IGBT technology, enable
ruggedized single package construction. The
logic inputs are compatible with standard CMOS
or LSTTL outputs, down to 3.3V logic. The front-
end features an independent high and low side
driver in phase with the logic compatible input
signals. The output features two IGBT’s in a half-
bridge configuration. Propagation delays for the
high and low side power IGBT’s are matched to
simplify use. The device can operate up to 575 volts.
Package
Product Summary
V
IN
(max)
575V
P
D
(T
A
= 25
)
3.0W
V
CE(ON)
typ
3.0V
C
7 Pin
HIGH VOLTAGE HALF BRIDGE
Preliminary Data Sheet No. PD60171-D
IR062HD4C10U-P2
IR082HD4C10U-P2
www.irf.com
1
Features
Output Power IGBT’s in half-bridge configuration
575V rated breakdown voltage
High side gate drive designed for bootstrap
operation
Matched propagation delay for both channels
Independent high and low side output channels
(IR062HD4C10U-P2) or cross-conduction
prevention logic (IR082HD4C10U-P2)
Undervoltage lockout
3.3V, 5V and 15V input logic compatible
Metal heatsink back for improved PD
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