- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄360914 > IR01HD420 PERIPHERAL DRIVER|1 DRIVER|CMOS|SIP|9PIN|PLASTIC PDF資料下載
參數(shù)資料
| 型號： | IR01HD420 |
| 英文描述： | PERIPHERAL DRIVER|1 DRIVER|CMOS|SIP|9PIN|PLASTIC |
| 中文描述： | 外圍設(shè)備驅(qū)動程序| 1驅(qū)動器|的CMOS |園區(qū)| 9針|塑料 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 85K |
| 代理商： | IR01HD420 |
4
IR01H(D)214 / IR01H(D)214-P2
IR01H(D)224 / IR01H(D)224-P2
IR01H(D)420 / IR01H(D)420-P2
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V and T
A
= 25°C unless otherwise specified. Switching time waveform definitions are shown in
figure 2.
Symbol
t
on
t
off
t
r
t
f
MT
t
rr
Qrr
Definition
Min.
—
—
Typ. Max. Units Test Conditions
130
200
90
200
Turn-On Propagation Delay (see note 2)
Turn-Off Propagation Delay (see note 2)
Vs = 0V
Vs = 500V
Turn-On Rise Time (see note 2)
—
80
120
ns
Turn-Off Fall Time (see note 2)
—
40
70
Delay Matching, HS & LS Turn-On/Off
—
30
—
Reverse Recovery Time (MOSFET Body Diode)
—
260
—
I
F
= 0.7A
di/dt
= 100 A/us
Reverse Recovery Charge (MOSFET Body Diode)
—
0.7
—
μC
Note 2: Switching times as specified and illustrated in figure 2 are referenced to the MOSFET gate input
voltage. This is shown as HO in figure 2.
Static Electrical Characteristics
V
BIAS
(V
CC
, V
B
) = 15V and T
A
= 25°C unless otherwise specified. The Input voltage and current levels are referenced to
COM.
Symbol
V
CCUV+
Definition
Min.
8.8
Typ. Max. Units Test Conditions
9.3
9.8
V
V
CC
Supply Undervoltage Positive Going
Threshold
V
CCUV-
V
CC
Supply Undervoltage Negative Going
Threshold
7.5
8.2
8.6
V
I
QCC
I
QBS
I
os
V
IH
V
IL
I
IN+
I
IN-
Rds(on)
Quiescent V
CC
Supply Current
Quiescent V
BS
Supply Current
Offset Supply Leakage Current
—
140
240
μA
—
20
50
μA
—
—
50
μA
V
B
= V
S
= 500V
V
CC
= 10V to 20V
V
Logic “1” Input Voltage
2.7
—
—
V
V V
CC
= 10V to 20V
Logic “0” Input Voltage
—
—
0.8
Logic “1” Input Bias Current
—
20
40
Logic “0” Input Bias Current
—
—
1.0
Static Drain-to-Source On-Resistance
214
—
2.0
—
V
Id=850mA/T
J
=150
Id=1.1A/T
J
=150
Id=700mA/T
J
=150
Id=700mA/T
J
=150
Id=1.1A/T
J
=150
o
C
224
—
1.1
—
o
C
420
—
3.0
—
o
C
o
C
V
SD
Diode Forward Voltage
214/420
—
0.8
—
224
—
0.85
—
o
C
V
μA
Powered by ICminer.com Electronic-Library Service CopyRight 2003
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IR01HD420-P2 | PERIPHERAL DRIVER|1 DRIVER|CMOS|SIP|9PIN|PLASTIC |
| IR01H214 | PERIPHERAL DRIVER|1 DRIVER|CMOS|SIP|9PIN|PLASTIC |
| IR01H214-P2 | PERIPHERAL DRIVER|1 DRIVER|CMOS|SIP|9PIN|PLASTIC |
| IR01H224 | PERIPHERAL DRIVER|1 DRIVER|CMOS|SIP|9PIN|PLASTIC |
| IR01H224-P2 | PERIPHERAL DRIVER|1 DRIVER|CMOS|SIP|9PIN|PLASTIC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IR01HD420-P2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PERIPHERAL DRIVER|1 DRIVER|CMOS|SIP|9PIN|PLASTIC |
| IR-0208-P-Q90-SWITCH-MKII | 制造商:TE Connectivity 功能描述:883721-000 |
| IR-02-434 | 制造商:AEI SECURITY 功能描述:DETECTOR PIR WIRELESS |
| IR02BH100J | 制造商:Vishay Dale 功能描述:IND MLD 10UH 5% 7.9MHZ 55Q-FCTR IRON 130MA AXL - Bulk |
| IR02BH100K | 功能描述:固定電感器 10uH 10% RoHS:否 制造商:AVX 電感:10 uH 容差:20 % 最大直流電流:1 A 最大直流電阻:0.075 Ohms 工作溫度范圍:- 40 C to + 85 C 自諧振頻率:38 MHz Q 最小值:40 尺寸:4.45 mm W x 6.6 mm L x 2.92 mm H 屏蔽:Shielded 端接類型:SMD/SMT 封裝 / 箱體:6.6 mm x 4.45 mm |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。