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參數(shù)資料
| 型號： | IPP05N03LA |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS 2 Power-Transistor |
| 中文描述： | 的OptiMOS 2功率晶體管 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 348K |
| 代理商： | IPP05N03LA |
IPB05N03LA
IPI05N03LA, IPP05N03LA
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
2413
3110
pF
Output capacitance
C
oss
-
921
1225
Reverse transfer capacitance
C
rss
-
112
167
Turn-on delay time
t
d(on)
-
11
17
ns
Rise time
t
r
-
27
38
Turn-off delay time
t
d(off)
-
32
45
Fall time
t
f
-
4.6
6.9
Gate Charge Characteristics
6)
Gate to source charge
Q
gs
-
8.1
11
nC
Gate charge at threshold
Q
g(th)
-
3.9
5.0
Gate to drain charge
Q
gd
-
5.3
8.0
Switching charge
Q
sw
-
10
14
Gate charge total
Q
g
-
19
25
Gate plateau voltage
V
plateau
-
3.4
-
V
Gate charge total, sync. FET
Q
g(sync)
V
DS
=0.1 V,
V
GS
=0 to 5 V
-
17
22
nC
Output charge
Q
oss
V
DD
=15 V,
V
GS
=0 V
-
20
27
Reverse Diode
Diode continous forward current
I
S
-
-
80
A
Diode pulse current
I
S,pulse
-
-
385
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=80 A,
T
j
=25 °C
-
0.97
1.2
V
Reverse recovery charge
Q
rr
V
R
=15 V,
I
F
=
I
S
,
d
i
F
/d
t
=400 A/μs
-
-
10
nC
6)
See figure 16 for gate charge parameter definition
T
C
=25 °C
Values
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
V
DD
=15 V,
V
GS
=10 V,
I
D
=20 A,
R
G
=2.7
V
DD
=15 V,
I
D
=40 A,
V
GS
=0 to 5 V
Rev. 1.4
page 3
2004-03-23
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IPP05N03LAXK | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 80A 3-Pin(3+Tab) TO-220AB |
| IPP05N03LB | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:OptiMOS㈢2 Power-Transistor |
| IPP05N03LB G | 功能描述:MOSFET N-CH 30V 80A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| IPP05N03LBG_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:OptiMOS2 Power-Transistor |
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