參數(shù)資料
型號(hào)： IPP03N03LA
廠商： INFINEON TECHNOLOGIES AG
英文描述： OptiMOS 2 Power-Transistor
中文描述： 的OptiMOS 2功率晶體管
文件頁數(shù)： 2/10頁
文件大?。?/td> 317K
代理商： IPP03N03LA
IPB03N03LA
IPI03N03LA, IPP03N03LA
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
-
-
1
K/W
SMD version, device on PCB
R
thJA
minimal footprint
-
-
62
6 cm
2
cooling area
4)
-
-
40
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
25
-
-
V
Gate threshold voltage
V
GS(th)
V
DS
=
V
GS
,
I
D
=100 μA
1.2
1.6
2
Zero gate voltage drain current
I
DSS
V
DS
=25 V,
V
GS
=0 V,
T
j
=25 °C
-
0.1
1
μA
V
DS
=25 V,
V
GS
=0 V,
T
j
=125 °C
-
10
100
Gate-source leakage current
I
GSS
V
GS
=20 V,
V
DS
=0 V
-
10
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=4.5 V,
I
D
=55 A
-
3.6
4.4
m
V
GS
=4.5 V,
I
D
=55 A,
SMD version
-
3.3
4.1
V
GS
=10 V,
I
D
=55 A
-
2.5
3.0
V
GS
=10 V,
I
D
=55 A,
SMD version
-
2.2
2.7
Gate resistance
R
G
-
0.9
-
Transconductance
g
fs
|
V
DS
|>2|
I
D
|
R
DS(on)max
,
I
D
=55 A
56
112
-
S
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 μm thick) copper area for drain
connection. PCB is vertical in still air.
Values
1)
Current is limited by bondwire; with an
R
thJC
=1 K/W the chip is able to carry 175 A.
2)
See figure 3
3)
T
j,max
=150 °C and duty cycle
D
<0.25 for
V
GS
<-5 V
Rev. 1.3
page 2
2003-12-18
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