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參數(shù)資料
| 型號： | IPI60R385CP |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | CoolMOS Power Transistor |
| 中文描述： | 的CoolMOS功率晶體管 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 331K |
| 代理商： | IPI60R385CP |
IPI60R385CP
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
790
-
pF
Output capacitance
C
oss
-
38
-
Effective output capacitance, energy
related
5)
C
o(er)
-
36
-
Effective output capacitance, time
related
6)
C
o(tr)
-
96
-
Turn-on delay time
t
d(on)
-
10
-
ns
Rise time
t
r
-
5
-
Turn-off delay time
t
d(off)
-
40
-
Fall time
t
f
-
5
-
Gate Charge Characteristics
Gate to source charge
Q
gs
-
4
-
nC
Gate to drain charge
Q
gd
-
6
-
Gate charge total
Q
g
-
17
22
Gate plateau voltage
V
plateau
-
5.0
-
V
Reverse Diode
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=5.2 A,
T
j
=25 °C
-
0.9
1.2
V
Reverse recovery time
t
rr
-
260
-
ns
Reverse recovery charge
Q
rr
-
3.1
-
μC
Peak reverse recovery current
I
rrm
-
24
-
A
1)
J-STD20 and JESD22
2)
Pulse width
t
p
limited by
T
j,max
5)
C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS.
V
R
=400 V,
I
F
=
I
S
,
d
i
F
/d
t
=100 A/μs
6)
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS.
3)
Repetitive avalanche causes additional power losses that can be calculated as
P
AV
=
E
AR
*
f.
4)
I
SD
<
=I
D
, di/dt<=400A/μs, V
DClink
=400V, V
peak
<V
(BR)DSS
, T
j
<T
jmax
, identical low side and high side switch
.
Values
V
GS
=0 V,
V
DS
=100 V,
f
=1 MHz
V
DD
=400 V,
V
GS
=10 V,
I
D
=5.2 A,
R
G
=3.3
V
DD
=400 V,
I
D
=5.2 A,
V
GS
=0 to 10 V
V
GS
=0 V,
V
DS
=0 V
to 480 V
Rev. 2.0
page 3
2006-04-05
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IPI60R385CP_07 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:CoolMOSTM Power Transistor |
| IPI60R385CPXK | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 650V 9A 3-Pin(3+Tab) TO-262 |
| IPI60R385CPXKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 650V 9A 3-Pin(3+Tab) TO-262 制造商:Infineon Technologies AG 功能描述:COOL MOS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 650V 9A I2PAK |
| IPI60R520CP | 功能描述:MOSFET N-CH 600V 6.8A TO-262 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:CoolMOS™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IPI60R520CPAKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 6.8A 3-Pin(3+Tab) TO-262 制造商:Infineon Technologies AG 功能描述:COOL MOS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 600V 6.8A TO-262 |
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