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參數(shù)資料
| 型號(hào)： | IPD06N03L |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:41; Connector Shell Size:22; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Circular Contact Gender:Socket; Insert Arrangement:22-41 |
| 中文描述： | 的OptiMOS降壓轉(zhuǎn)換器系列 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 158K |
| 代理商： | IPD06N03L |
2003-01-17
Page 2
IPD06N03L
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
-
0.7
1
K/W
Thermal resistance, junction - ambient, leaded
R
thJA
-
-
100
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
3)
R
thJA
-
-
-
-
75
50
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V,
I
D
=1mA
V
(BR)DSS
30
-
-
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 80 μA
V
GS(th)
1.2
1.6
2
Zero gate voltage drain current
V
DS
=30V,
V
GS
=0V,
T
j
=25°C
V
DS
=30V,
V
GS
=0V,
T
j
=125°C
I
DSS
-
-
0.01
10
1
100
μA
Gate-source leakage current
V
GS
=20V,
V
DS
=0V
I
GSS
-
1
100
nA
Drain-source on-state resistance
V
GS
=4.5V,
I
D
=30A
R
DS(on)
-
6.8
8.7
m
Drain-source on-state resistance
V
GS
=10V,
I
D
=30A
R
DS(on)
-
4.7
5.9
1Current limited by bondwire ; with an
R
thJC
= 1K/W the chip is able to carry
I
D
= 113A at 25°C, for detailed
information see app.-note ANPS071E available at
www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
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