型號(hào): | IPB80N08S2L-07 |
廠商: | INFINEON TECHNOLOGIES AG |
英文描述: | OptiMOS㈢ Power-Transistor |
中文描述: | 的OptiMOS㈢功率晶體管 |
文件頁數(shù): | 1/8頁 |
文件大?。?/td> | 163K |
代理商: | IPB80N08S2L-07 |
相關(guān)PDF資料 |
PDF描述 |
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IPB80P03P3L-04 | OptiMOS-P Power-Transistor |
IPD03N03LB | OptiMOS 2 Power-Transistor |
IPD03N03LBG | OptiMOS 2 Power-Transistor |
IPD03N03LA | Ideal for high-frequency dc/dc converters Qualified according to JEDEC for target applications |
IPD04N03L | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT02; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Box Mount Receptacle |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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IPB80N08S2L07ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 75V 80A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 75V 80A TO263-3 |
IPB80P03P3L-04 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:OptiMOS-P Power-Transistor |
IPB80P03P4-05 | 功能描述:MOSFET P-Channel -30V MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
IPB80P03P405ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET P-CH 30V 80A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET P-CH 30V 80A TO263-3 |
IPB80P03P4L-04 | 功能描述:MOSFET P-Channel -30V MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |