參數(shù)資料
型號: IPA60R299CP
廠商: INFINEON TECHNOLOGIES AG
英文描述: CoolMOS Power Transistor
中文描述: 的CoolMOS功率晶體管
文件頁數(shù): 1/10頁
文件大?。?/td> 275K
代理商: IPA60R299CP
IPA60R299CP
CoolMOS
TM
Power Transistor
Features
Lowest figure-of-merit R
ON
xQ
g
Ultra low gate charge
6.6
Extreme dv/dt rated
High peak current capability
Qualified according to JEDEC
1)
for target applications
Pb-free lead plating; RoHS compliant
CoolMOS CP is specially designed for:
Hard switching SMPS topologies
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
2)
I
D
T
C
=25 °C
A
T
C
=100 °C
Pulsed drain current
3)
I
D,pulse
T
C
=25 °C
Avalanche energy, single pulse
E
AS
I
D
=4.4 A,
V
DD
=50 V
290
mJ
Avalanche energy, repetitive
t
AR
3),4)
E
AR
I
D
=4.4 A,
V
DD
=50 V
Avalanche current, repetitive
t
AR
3),4)
I
AR
A
MOSFET d
v
/d
t
ruggedness
d
v
/d
t
V
DS
=0...480 V
V/ns
Gate source voltage
V
GS
static
V
AC (
f
>1 Hz)
Power dissipation
P
tot
T
C
=25 °C
W
Operating and storage temperature
T
j
,
T
stg
°C
Mounting torque
M2.5 screws
50
Ncm
Value
11
7
34
±30
33
-55 ... 150
0.44
4.4
50
±20
V
DS
@ T
j,max
650
V
R
DS(on),max
0.299
Q
g,typ
22
nC
Product Summary
Type
Package
Ordering Code
Marking
IPA60R299CP
PG-TO220-3-31
SP000096438
6R299P
PG-TO220-3-31
Rev. 1.3
page 1
2005-12-22
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