3
INA132
SPECIFICATIONS: V
S
= +5V
At T
A
= +25
°
C, V
S
= +5V, R
L
= 10k
connected to V
S
/2, and Reference Pin connected to V
S
/2, unless otherwise noted.
INA132P, U
INA132PA, UA
PARAMETER
OFFSET VOLTAGE
(1)
Initial
vs Temperature
CONDITIONS
RTO
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
±
150
±
2
±
500
8
8
±
750
μ
V
μ
V/
°
C
INPUT VOLTAGE RANGE
Common-Mode Voltage Range
Common-Mode Rejection
0
2(V+)–2
8
70
8
V
dB
V
CM
= 0V to 8V, R
S
= 0
76
90
8
OUTPUT
Voltage, Positive
R
L
= 100k
R
L
= 100k
R
L
= 10k
R
L
= 10k
(V+)–1
+0.25
(V+)–1
+0.25
(V+)–0.75
+0.06
(V+)–0.8
+0.12
8
8
8
8
8
8
8
8
V
V
V
V
Negative
Positive
Negative
POWER SUPPLY
Rated Voltage
Voltage Range
Quiescent Current
+5
8
V
V
μ
A
+2.7
+36
±
185
8
8
8
I
O
= 0mA
±
155
8
8
Specifications the same as INA132P.
NOTE: (1) Include effects of amplifier’s input bias and offset currents.
PIN CONFIGURATION
TOP VIEW
DIP/SOIC
Ref
–In
+In
V–
No Internal Connection
V+
Output
Sense
1
2
3
4
8
7
6
5
Supply Voltage, V+ to V–.................................................................... 36V
Input Voltage Range..........................................................................
±
80V
Output Short-Circuit (to ground).............................................. Continuous
Operating Temperature ................................................. –55
°
C to +125
°
C
Storage Temperature..................................................... –55
°
C to +125
°
C
Junction Temperature.................................................................... +150
°
C
Lead Temperature (soldering, 10s)............................................... +300
°
C
ABSOLUTE MAXIMUM RATINGS
ORDERING INFORMATION
PACKAGE
DRAWING
NUMBER
(1)
TEMPERATURE
RANGE
PRODUCT
PACKAGE
INA132PA
INA132P
INA132UA
INA132U
8-Pin Plastic DIP
8-Pin Plastic DIP
SO-8 Surface-Mount
SO-8 Surface-Mount
006
006
182
182
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with ap-
propriate precautions. Failure to observe proper handling and
installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.