參數(shù)資料
型號(hào): INA122PA
元件分類(lèi): 測(cè)量放大器
英文描述: microPower, Single-Supply, CMOS Instrumentation Amplifier
中文描述: 微功耗,單電源,儀表放大器的CMOS
文件頁(yè)數(shù): 2/9頁(yè)
文件大小: 223K
代理商: INA122PA
2
INA122
SPECIFICATIONS
At T
A
= +25
°
C, V
S
= +5V, R
L
= 20k
connected to V
S
/2, unless otherwise noted.
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
INA122P, U
INA122PA, UA
PARAMETER
CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
INPUT
Offset Voltage, RTI
vs Temperature
vs Power Supply (PSRR)
Input Impedance
Safe Input Voltage
±
100
±
1
10
10
10
|| 3
±
250
±
3
30
±
150
6
6
6
±
500
±
5
100
μ
V
μ
V/
°
C
μ
V/V
|| pF
V
V
V
dB
V
S
= +2.2V to +36V
R
S
= 0
R
S
= 10k
(V–)–0.3
(V–)–40
0
83
(V+)+0.3
(V+)+40
3.4
6
6
6
76
6
6
6
Common-Mode Voltage Range
Common-Mode Rejection
V
CM
= 0V to 3.4V
96
90
INPUT BIAS CURRENT
vs Temperature
Offset Current
vs Temperature
–10
±
40
±
1
±
40
–25
6
6
6
6
–50
nA
pA/
°
C
nA
pA/
°
C
V/V
V/V
%
ppm/
°
C
%
ppm/
°
C
%
±
2
±
5
GAIN
Gain Equation
Gain Error
vs Temperature
Gain Error
vs Temperature
Nonlinearity
G = 5 to 10k
G = 5 + 200k
/R
G
±
0.05
5
±
0.3
±
25
±
0.005
6
6
6
6
6
6
6
G = 5
G = 5
G = 100
G = 100
±
0.1
10
±
0.5
±
100
±
0.012
±
0.15
6
±
1
6
±
0.024
G = 100, V
O
= –14.85V to +14.9V
NOISE (RTI)
Voltage Noise, f = 1kHz
60
100
110
2
80
2
6
6
6
6
6
6
nV/
Hz
nV/
Hz
nV/
Hz
μ
Vp-p
fA/
Hz
pAp-p
f = 100Hz
f = 10Hz
f
B
= 0.1Hz to 10Hz
Current Noise, f = 1kHz
f
B
= 0.1Hz to 10Hz
OUTPUT
Voltage, Positive
V
S
=
±
15V
V
S
=
±
15V
(V+)–0.1
(V–)+0.15
(V+)–0.05
(V–)+0.1
+3/–30
1
6
6
6
6
6
6
V
V
Negative
Short-Circuit Current
Capacitive Load Drive
Short-Circuit to Ground
mA
nF
FREQUENCY RESPONSE
Bandwidth, –3dB
G = 5
G = 100
G = 500
120
5
0.9
6
6
6
6
6
6
6
6
kHz
kHz
kHz
V/
μ
s
μ
s
μ
s
ms
μ
s
Slew Rate
Settling Time, 0.01%
+0.08/–0.16
350
450
1.8
3
G = 5
G = 100
G = 500
Overload Recovery
50% Input Overload
POWER SUPPLY
Voltage Range, Single Supply
+2.2
+5
+36
±
18
85
6
6
6
6
6
6
6
6
V
V
μ
A
Dual Supplies
–0.9/+1.3
Current
I
O
= 0
60
TEMPERATURE RANGE
Specification
Operation
Storage
Thermal Resistance,
θ
JA
8-Pin DIP
SO-8 Surface-Mount
–40
–55
–55
+85
+85
+125
6
6
6
6
6
6
°
C
°
C
°
C
150
150
6
6
°
C/W
°
C/W
6
Specification same as INA122P, INA122U.
相關(guān)PDF資料
PDF描述
INA122U microPower, Single-Supply, CMOS Instrumentation Amplifier
INA122P microPower, Single-Supply, CMOS Instrumentation Amplifier
INA122 microPower, Single-Supply, CMOS Instrumentation Amplifier
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