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參數(shù)資料
| 型號(hào)： | INA110KP |
| 元件分類： | 測(cè)量放大器 |
| 英文描述： | Fast-Settling FET-Input INSTRUMENTATION AMPLIFIER |
| 中文描述： | 快速建立FET輸入儀表放大器 |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 148K |
| 代理商： | INA110KP |
INA110
Fast-Settling FET-Input
INSTRUMENTATION AMPLIFIER
APPLICATIONS
G
MULTIPLEXED INPUT DATA
ACQUISITION SYSTEM
G
FAST DIFFERENTIAL PULSE AMPLIFIER
G
HIGH SPEED GAIN BLOCK
G
AMPLIFICATION OF HIGH IMPEDANCE
SOURCES
DESCRIPTION
The INA110 is a versatile monolithic FET-input
instrumentation amplifier. Its current-feedback circuit
topology and laser trimmed input stage provide
excellent dynamic performance and accuracy. The
INA110 settles in 4
μ
s to 0.01%, making it ideal for
high speed or multiplexed-input data acquisition
systems.
Internal gain-set resistors are provided for gains of 1,
10, 100, 200, and 500V/V. Inputs are protected for
differential and common-mode voltages up to
±
V
CC
.
Its very high input impedance and low input bias
current make the INA110 ideal for applications
requiring input filters or input protection circuitry.
The INA110 is available in 16-pin plastic and ceramic
DIPs, and in the SOL-16 surface-mount package.
Military, industrial and commercial temperature range
grades are available.
A
1
1
404
4.44k
201
80.2
A
2
20k
10k
10k
20k
A
3
10k
10k
13
12
16
11
3
2
4
5
8
7
14
15
9
6
10
–In
X
10
X
100
X
200
X
500
R
G
+In
(1)
Output
Ref
Sense
+V
CC
–V
CC
Input
Offset
Adjust
Output
Offset
Adjust
FET
Input
FET
Input
INA110
NOTE: (1) Connect to R
G
for desired gain.
International Airport Industrial Park Mailing Address: PO Box 11400 Tucson, AZ 85734 Street Address: 6730 S. Tucson Blvd. Tucson, AZ 85706
Tel: (520) 746-1111 Twx: 910-952-1111 Cable: BBRCORP Telex: 066-6491 FAX: (520) 889-1510 Immediate Product Info: (800) 548-6132
FEATURES
G
LOW BIAS CURRENT: 50pA max
G
FAST SETTLING: 4
μ
s to 0.01%
G
HIGH CMR: 106dB min; 90dB at 10kHz
G
INTERNAL GAINS: 1, 10, 100, 200, 500
G
VERY LOW GAIN DRIFT: 10 to 50ppm/
°
C
G
LOW OFFSET DRIFT: 2
μ
V/
°
C
G
LOW COST
G
PINOUT SIMILAR TO AD524 AND AD624
1986 Burr-Brown Corporation
PDS-645E
Printed in U.S.A. September, 1993
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| INA110KP | 制造商:BURR-BROWN 功能描述:IC AMP INSTRUMENTATION DIP16 110 |
| INA110KP | 制造商:Texas Instruments 功能描述:Instrumentation Amplifier IC |
| INA110KPG4 | 功能描述:儀表放大器 Fast-Settling FET-In Very High Accuracy RoHS:否 制造商:Texas Instruments 通道數(shù)量: 輸入補(bǔ)償電壓:150 V 可用增益調(diào)整: 最大輸入電阻:10 kOhms 共模抑制比（最小值）:88 dB 工作電源電壓:2.7 V to 36 V 電源電流:200 uA 最大工作溫度:+ 125 C 最小工作溫度:- 40 C 封裝 / 箱體:MSOP-8 封裝:Bulk |
| INA110KU | 功能描述:儀表放大器 Fast-Settling FET-In Very High Accuracy RoHS:否 制造商:Texas Instruments 通道數(shù)量: 輸入補(bǔ)償電壓:150 V 可用增益調(diào)整: 最大輸入電阻:10 kOhms 共模抑制比（最小值）:88 dB 工作電源電壓:2.7 V to 36 V 電源電流:200 uA 最大工作溫度:+ 125 C 最小工作溫度:- 40 C 封裝 / 箱體:MSOP-8 封裝:Bulk |
| INA110KU | 制造商:Texas Instruments 功能描述:AMP INSTRUMENTATION SOIC16 110 |
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