參數(shù)資料
型號： INA-50311
英文描述： 1 GHz Low Noise Silicon MMIC Amplifier
中文描述： 1 GHz的硅單片低噪聲放大器
文件頁數(shù)： 2/5頁
文件大?。?/td> 64K
代理商： INA-50311
6-147
Absolute Maximum Ratings
Absolute
Maximum
[1]
12
+13
150
-65 to 150
Symbol
V
CC
P
in
T
j
T
STG
Parameter
Units
V
dBm
°
C
°
C
Device Voltage, to ground
CW RF Input Power
Junction Temperature
Storage Temperature
INA-50311 Electrical Specifications
[3]
,
T
C
= 25
°
C, Z
O
= 50
, V
CC
= 5 V
Symbol
Parameters and Test Conditions
G
p
Power Gain (|S
21
|
2
)
NF
Noise Figure
P
1dB
Output Power at 1 dB Gain Compression
IP
3
Third Order Intercept Point
VSWR
Input VSWR
Output VSWR
I
cc
Device Current
ι
d
Group Delay
Units
dB
dB
dBm
dBm
Min.
16.5
Typ.
19
3.6
0
+10
1.5
1.2
17
320
Max.
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
mA
ps
22
f = 900 MHz
INA-50311 Typical Scattering Parameters
[3]
,
T
C
= 25
°
C, Z
O
= 50
, V
CC
= 5 V
Freq.
S
11
S
21
GHz
Mag
Ang
dB
Mag
0.05
0.12
-2
22.2
12.82
0.10
0.12
-5
22.2
12.81
0.20
0.12
-10
22.1
12.80
0.30
0.14
-16
22.1
12.68
0.40
0.15
-25
21.9
12.45
0.50
0.16
-32
21.7
12.12
0.60
0.17
-45
21.3
11.65
0.70
0.18
-57
20.9
11.04
0.80
0.19
-71
20.3
10.35
0.90
0.19
-84
19.6
9.57
1.00
0.20
-98
18.9
8.78
1.20
0.21
-122
17.2
7.28
1.40
0.21
-143
15.5
5.97
1.60
0.21
-162
13.8
4.92
1.80
0.22
-177
12.2
4.08
2.00
0.22
170
10.7
3.43
2.20
0.21
158
9.3
2.92
2.40
0.20
149
8.1
2.53
2.50
0.20
146
7.5
2.37
S
12
Mag
0.025
0.026
0.027
0.028
0.030
0.032
0.034
0.038
0.041
0.045
0.050
0.061
0.072
0.084
0.095
0.106
0.119
0.127
0.131
S
22
K
Ang
-6
-12
-24
-36
-49
-61
-74
-87
-99
-111
-122
-143
-161
-176
169
157
145
134
129
dB
-31.9
-31.7
-31.4
-31.1
-30.6
-30.0
-29.3
-28.5
-27.7
-26.9
-26.0
-24.3
-22.8
-21.5
-20.4
-19.5
18.5
-17.9
-17.7
Ang
5
9
16
23
30
36
42
47
51
54
56
59
60
60
58
55
54
50
49
Mag
0.08
0.07
0.07
0.08
0.09
0.09
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.10
0.10
0.10
0.10
0.11
0.12
Ang
-11
-24
-44
-62
-78
-94
-107
-120
-131
-141
-149
-163
-172
-179
175
172
166
163
160
Factor
1.68
1.63
1.59
1.55
1.48
1.44
1.42
1.36
1.35
1.34
1.32
1.31
1.33
1.37
1.42
1.49
1.55
1.65
1.69
Note:
3. Reference plane per Figure 9 in Applications Information section.
Thermal Resistance
[2]
:
θ
jc
= 550
°
C/W
Notes:
1. Operation of this device above any one
of these limits may cause permanent
damage.
2. T
C
= 25
°
C (T
C
is defined to be the
temperature at the package pins where
contact is made to the circuit board).
相關(guān)PDF資料
PDF描述
INA-50311-BLK 1 GHz Low Noise Silicon MMIC Amplifier
INA-50311-TR1 1 GHz Low Noise Silicon MMIC Amplifier
INA-51063 2.4 GHz Low Noise Silicon MMIC Amplifier
INA-51063-BLK 2.4 GHz Low Noise Silicon MMIC Amplifier
INA-51063-TR1 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
INA-50311-BLK 制造商:Hewlett Packard Co 功能描述:Microwave Amplifier, Single, 4 Pin, Plastic, TO-253 制造商:KBK ELEC 功能描述:Microwave Amplifier, Single, 4 Pin, Plastic, TO-253
INA-50311-TR1 制造商:AGILENT 制造商全稱:AGILENT 功能描述:1 GHz Low Noise Silicon MMIC Amplifier
INA506 制造商: 功能描述: 制造商:undefined 功能描述:
INA-51063 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2.4 GHz Low Noise Silicon MMIC Amplifier
INA-51063-BLK 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2.4 GHz Low Noise Silicon MMIC Amplifier
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