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參數(shù)資料
| 型號(hào)： | IN74HC125AN |
| 廠商： | INTEGRAL JOINT STOCK COMPANY |
| 英文描述： | Quad 3-State Noninverting Buffers High-Performance Silicon-Gate CMOS |
| 中文描述： | 四三態(tài)同相緩沖器高性能硅柵CMOS |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 88K |
| 代理商： | IN74HC125AN |
IN74HC125A
119
MAXIMUM RATINGS
*
Symbol
Parameter
Value
Unit
V
CC
V
IN
V
OUT
I
IN
DC Supply Voltage (Referenced to GND)
-0.5 to +7.0
V
DC Input Voltage (Referenced to GND)
-1.5 to V
CC
+1.5
-0.5 to V
CC
+0.5
±
20
±
35
±
75
750
500
V
DC Output Voltage (Referenced to GND)
V
DC Input Current, per Pin
mA
I
OUT
DC Output Current, per Pin
mA
I
CC
DC Supply Current, V
CC
and GND Pins
mA
P
D
Power Dissipation in Still Air, Plastic DIP+
SOIC Package+
mW
Tstg
Storage Temperature
-65 to +150
°
C
°
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
260
*
Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/
°
C from 65
°
to 125
°
C
SOIC Package: : - 7 mW/
°
C from 65
°
to 125
°
C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
V
IN
, V
OUT
T
A
DC Input Voltage, Output Voltage (Referenced to GND)
0
V
CC
+125
V
°
C
ns
Operating Temperature, All Package Types
-55
t
r
, t
f
Input Rise and Fall Time (Figure 1)
V
CC
=2.0 V
V
CC
=4.5 V
V
CC
=6.0 V
0
0
0
1000
500
400
This device contains protection circuitry to guard against damage due to high static voltages or electric
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated
voltages to this high-impedance circuit. For proper operation, V
IN
and V
OUT
should be constrained to the range
GND
≤
(V
IN
or V
OUT
)
≤
V
CC
.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V
CC
).
Unused outputs must be left open.
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