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參數(shù)資料
| 型號： | IN74HC10AD |
| 廠商： | INTEGRAL JOINT STOCK COMPANY |
| 英文描述： | Triple 3-Input NAND Gate High-Performance Silicon-Gate CMOS |
| 中文描述： | 三3輸入與非門高性能硅柵CMOS |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 177K |
| 代理商： | IN74HC10AD |
IN74HC10A
DC ELECTRICAL CHARACTERISTICS
(Voltages Referenced to GND)
V
CC
V
Guaranteed Limit
25
°
C
to
-55
°
C
Symbol
Parameter
Test Conditions
≤
85
°
C
≤
125
°
C
Unit
V
IH
Minimum High-
Level Input Voltage
V
OUT
=0.1 V or V
CC
-0.1 V
I
OUT
≤
20
μ
A
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
V
IL
Maximum Low -
Level Input Voltage
V
OUT
=0.1 V or V
CC
-0.1 V
I
OUT
≤
20
μ
A
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0.9
1.2
0.3
0.9
1.2
V
V
OH
Minimum High-
Level Output Voltage
V
IN
=V
IH
or V
IL
I
OUT
≤
20
μ
A
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
V
IN
=V
IH
or V
IL
I
OUT
≤
4.0 mA
I
OUT
≤
5.2 mA
V
IN
=V
IH
I
OUT
≤
20
μ
A
4.5
6.0
3.98
5.48
3.84
5.34
3.7
5.2
V
OL
Maximum Low-
Level Output Voltage
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
=V
IH
I
OUT
≤
4.0 mA
I
OUT
≤
5.2 mA
V
IN
=V
CC
or GND
4.5
6.0
0.26
0.26
0.33
0.33
0.4
0.4
I
IN
Maximum Input
Leakage Current
6.0
±
0.1
±
1.0
±
1.0
μ
A
I
CC
Maximum Quiescent
Supply Current
(per Package)
V
IN
=V
CC
or GND
I
OUT
=0
μ
A
6.0
2.0
20
40
μ
A
3
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| IN74HC10AN | Triple 3-Input NAND Gate High-Performance Silicon-Gate CMOS |
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| IN74HC11AN | Triple 3-Input AND Gate High-Performance Silicon-Gate CMOS |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IN74HC10AN | 制造商:INTEGRAL 制造商全稱:INTEGRAL 功能描述:Triple 3-Input NAND Gate High-Performance Silicon-Gate CMOS |
| IN74HC10D | 制造商:INTEGRAL 制造商全稱:INTEGRAL 功能描述:TRIPLE 3-INPUT NAND GATE |
| IN74HC10N | 制造商:INTEGRAL 制造商全稱:INTEGRAL 功能描述:TRIPLE 3-INPUT NAND GATE |
| IN74HC112A | 制造商:IKSEMICON 制造商全稱:IK Semicon Co., Ltd 功能描述:Dual J-K Flip-Flop with Set and Reset High-Performance Silicon-Gate CMOS |
| IN74HC112AD | 制造商:IKSEMICON 制造商全稱:IK Semicon Co., Ltd 功能描述:Dual J-K Flip-Flop with Set and Reset High-Performance Silicon-Gate CMOS |
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